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RBQ30T45A Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer RBQ30T45A
Beschreibung Schottky Barrier Diode
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 5 Seiten
RBQ30T45A Datasheet, Funktion
Data Sheet
Schottky Barrier Diode
RBQ30T45A
lApplications
General rectification
    lDimensions (Unit : mm)
lFeatures
1)Cathode common type.
2)Low IR
3)High reliability
lConstruction
Silicon epitaxial planer
10.0±0.3
    0.1
1.2
1.3
0.8
(1) (2) (3)
4.5±0.3
    0.1
2.8±0.2
    0.1
0.7±0.1
0.05
2.6±0.5
lStructure
ROHM : TO220FN
Manufacture Date
www.DataSheet.co.kr
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Reverse voltage (repetitive)
Reverse voltage (DC)
VRM
VR
Average rectified forward current (*1)
Forward current surge peak (60Hz1cyc)
Junction temperature
Io
IFSM
Tj
Storage temperature
Tstg
(*1) Rating of per diode : Io/2
Limits
45
45
30
100
150
-40 to +150
Unit
V
V
A
A
°C
°C
lElectrical characteristics (Tj=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF - - 0.65
IR - - 450
Unit
V IF=15A
mA VR=45V
Conditions
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/





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