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RBQ30NS65A Schematic ( PDF Datasheet ) - ROHM Semiconductor

Teilenummer RBQ30NS65A
Beschreibung Schottky Barrier Diode
Hersteller ROHM Semiconductor
Logo ROHM Semiconductor Logo 




Gesamt 5 Seiten
RBQ30NS65A Datasheet, Funktion
Schottky Barrier Diode
RBQ30NS65A
lApplications
General rectification
  lDimensions (Unit : mm)
lFeatures
1)Cathode Common Dual type.(LPDS)
2)Low IR.
BQ30NS
65A
Data Sheet
  lLand size figure (Unit : mm)
lConstruction
Silicon epitaxial planer
ROHM : LPDS
JEITA : TO263S
Manufacture Year, Week and Day
lTaping dimensions (Unit : mm)
lStructure
①②③
www.DataSheet.co.kr
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
Reverse voltage (DC)
VRM
65
VR 65
Average rectified forward current (*1)
Io
30
Forward current surge peak (60Hz1cyc) (*2)
Junction temperature
IFSM
Tj
100
150
Storage temperature
Tstg -40 to +150
(*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C.
lElectrical characteristics (Tj=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF - - 0.69
IR - - 0.45
Unit
V
V
A
A
°C
°C
Unit
V IF=15A
mA VR=65V
Conditions
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/





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