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Teilenummer | RBQ20NS45A |
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Beschreibung | Schottky Barrier Diode | |
Hersteller | ROHM Semiconductor | |
Logo | ||
Gesamt 5 Seiten Schottky Barrier Diode
RBQ20NS45A
lApplications
General rectification
lDimensions (Unit : mm)
lFeatures
1)Cathode Common Dual type.(LPDS)
2)Low IR.
BQ20NS
45A ①
Data Sheet
lLand size figure (Unit : mm)
lConstruction
Silicon epitaxial planer
ROHM : LPDS
JEITA : TO263S
① Manufacture Year, Week and Day
lStructure
lTaping dimensions (Unit : mm)
①② ③
www.DataSheet.co.kr
lAbsolute maximum ratings (Tc=25C)
Parameter
Symbol
Limits
Reverse voltage (repetitive peak)
Reverse voltage (DC)
VRM
VR
45
45
Average rectified forward current (*1)
Io
20
Forward current surge peak (60Hz・1cyc) (*2)
Junction temperature
IFSM
Tj
100
150
Storage temperature
Tstg -40 to +150
(*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C.
lElectrical characteristics (Tj=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
Reverse current
VF - - 0.65
IR - - 0.3
Unit
V
V
A
A
°C
°C
Unit
V IF=10A
mA VR=45V
Conditions
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ RBQ20NS45A Schematic.PDF ] |
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