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PDF RBQ10NS65A Data sheet ( Hoja de datos )
| Número de pieza | RBQ10NS65A | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
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Schottky Barrier Diode
RBQ10NS65A
lApplications
General rectification
lDimensions(Unit : mm)
lGeneral rectification
1)Cathode Common Dual type.（LPDS）
2)Low IR.
BQ10NS
65A ①
Data Sheet
lLand size figure (Unit : mm)
lConstruction
Silicon epitaxial planer
ROHM : LPDS
JEITA : TO263S
① Manufacture Year, Week and Day
lStructure
① ②③
lTaping dimensions（Unit : mm）
www.DataSheet.co.kr
●Absolute maximum ratings(Tc=25°C)
Parameter
Symbol
Limits
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
65
65
10
Forward current surge peak (60Hz・1cyc)(*2)
Junction temperature
IFSM
Tj
50
150
Storage temperature
Tstg -40 to +150
(*1) 60Hz half sin wave, 1/2 Io per diode.
(*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25°C.
lElectrical characteristics(Tj=25°C)
Parameter
Forward voltage
Reverse current
Symbol
VF
IR
Min. Typ. Max.
- - 0.69
- - 0.15
Unit
V
V
A
A
°C
°C
Unit Conditions
V IF=5A
mA VR=65V
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
Notes
Notice
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Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
ROHM Customer Support System
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A
Datasheet pdf - http://www.DataSheet4U.net/
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| PDF Descargar | [ Datasheet RBQ10NS65A.PDF ] | |
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