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Teilenummer | RBQ10B65A |
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Beschreibung | Schottky Barrier Diode | |
Hersteller | ROHM Semiconductor | |
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Gesamt 5 Seiten Data Sheet
Schottky Barrier Diode
RBQ10B65A
Applications
General rectification
Features
1)Power mold type. (CPD)
2)Low IR
3)High reliability
Construction
Silicon epitaxial planer
Dimensions (Unit : mm)
C0.5
6.5±0.2
5.1±0.2
0.1
2.3±0.2
0.1
0.5±0.1
0.9
(1) (2) (3)
0.75
0.65±0.1
2.3±0.2 2.3±0.2
0.5±0.1
1.0±0.2
ROHM : CPD
JEITA : SC-63
Manufacture Date
Land size figure (Unit : mm)
6.0
1.6 1.6
CPD 2.3 2.3
Structure
Taping specifications (Unit : mm)
www.DataSheet.co.kr
Absolute maximum ratings(Tc=25°C)
Parameter
Symbol
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current (*1)
VRM
VR
Io
Forward current surge peak (60Hz・1cyc)(*2)
Junction temperature
IFSM
Tj
Storage temperature
Tstg
(*1) Business frequencies, 1/2 Io per diode.
(*2) Per diode.
Limits
65
65
10
50
150
−40 to +150
Electrical characteristics(Tj=25°C)
Parameter
Symbol Min. Typ. Max.
Forward voltage
VF -
- 0.69
Reverse current
IR - - 0.15
Unit
V
V
A
A
°C
°C
Unit Conditions
V IF=5A
mA VR=65V
www.rohm.com
© 2012 ROHM Co., Ltd. All rights reserved.
1/4
2012.01 - Rev.A
Datasheet pdf - http://www.DataSheet4U.net/
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ RBQ10B65A Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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