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PDF R8002ANX Data sheet ( Hoja de datos )
| Número de pieza | R8002ANX | |
| Descripción | Nch 800V 2A Power MOSFET | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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R8002ANX
Nch 800V 2A Power MOSFET
Datasheet
VDSS
RDS(on) (Max.)
ID
PD
Features
1) Low on-resistance.
800V
4.3
2A
36W
Outline
TO-220FM
Inner circuit
(1) (2) (3)
(2)
2) Fast switching speed.
3) Gate-source voltage (VGSS) guaranteed to be 30V.
4) Drive circuits can be simple.
(1)
(1) Gate
(2) Drain
*1 (3) Source
*1 Body Diode
5) Parallel use is easy.
(3)
6) Pb-free lead plating ; RoHS compliant
Packaging specifications
Packaging
Bulk
Application
Switching Power Supply
Reel size (mm)
Tape width (mm)
Type
Basic ordering unit (pcs)
-
-
500
Taping code
-
Marking
R8002ANX
Absolute maximum ratings(Ta = 25C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
Continuous drain current
Pulsed drain current
Gate - Source voltage
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Reverse diode dv/dt
Tc = 25°C
Tc = 100°C
VDSS
ID *1
ID *1
ID,pulse *2
VGSS
EAS *3
EAR *4
IAR *3
PD
Tj
Tstg
dv/dt *5
800
2
1
8
30
0.265
0.212
1
36
150
55 to 150
15
V
A
A
A
V
mJ
mJ
A
W
C
C
V/ns
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/13
2016.02 - Rev.C
1 page  
R8002ANX
Electrical characteristic curves
Data Sheet
Fig.1 Power Dissipation Derating Curve
120
100
80
60
40
20
0
0 50 100 150 200
Junction Temperature : Tj [°C]
Fig.2 Maximum Safe Operating Area
100
10
Operation in this
area is limited
1 by RDS(ON)
0.1 PW = 100s
PW = 1ms
0.01
Ta = 25ºC
Single Pulse
PW = 10ms
0.001
0.1 1 10 100
1000
Drain - Source Voltage : VDS [V]
Fig.3 Normalized Transient Thermal
Resistance vs. Pulse Width
1000
100
10
Ta = 25ºC
Single Pulse
Rth(ch-a)(t) = ｒ(t)×Rth(ch-a)
Rth(ch-a) = 70ºC/W
1
0.1
0.01
0.001
0.0001
0.0001
0.01
top D = 1
D = 0.5
D = 0.1
D = 0.05
D = 0.01
D = Single
1 100
Pulse Width : PW [s]
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/13
2016.02 - Rev.C
5 Page 
R8002ANX
Electrical characteristic curves
Data Sheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
10
VGS=0V
Pulsed
Ta= 125ºC
1 Ta= 75ºC
Ta= 25ºC
Ta= 25ºC
0.1
0.01
0.0
0.5 1.0 1.5
Source - Drain Voltage : VSD [V]
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
100
10
0
Ta=25ºC
di / dt = 100A / s
VGS = 0V
Pulsed
1 10
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
11/13
2016.02 - Rev.C
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet R8002ANX.PDF ] | |
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