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CEM2539A Schematic ( PDF Datasheet ) - CET

Teilenummer CEM2539A
Beschreibung Dual Enhancement Mode Field Effect Transistor
Hersteller CET
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Gesamt 7 Seiten
CEM2539A Datasheet, Funktion
www.DataSheet.co.kr
CEM2539A
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
20V, 7.5A, RDS(ON) = 22m@VGS = 10V.
RDS(ON) = 25m@VGS = 4.5V.
RDS(ON) = 40m@VGS = 2.5V.
-20V, -4A, RDS(ON) = 80m@VGS = -10V.
RDS(ON) = 100m@VGS = -4.5V.
RDS(ON) = 150m@VGS = -2.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
SO-8
1
D1 D2
G1 G2
S1 S2
D1 D1 D2 D2
87 65
1234
S1 G1 S2 G2
5
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
N-Channel
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
VDS 20
VGS ±12
ID 7.5
IDM 30
P-Channel
-20
±12
-4.0
-16
Maximum Power Dissipation
PD 2.0
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Units
V
V
A
A
W
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
62.5
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2007.Sep.
http://www.cetsemi.com
Datasheet pdf - http://www.DataSheet4U.net/






CEM2539A Datasheet, Funktion
www.DataSheet.co.kr
N-CHANNEL
5 VDS=10V
ID=6A
4
3
2
1
0
0 2 4 6 8 10
Qg, Total Gate Charge (nC)
Figure 13. Gate Charge
P-CHANNEL
5 VDS=-6V
ID=-3.5A
4
3
2
1
0
0 3 6 9 12
Qg, Total Gate Charge (nC)
Figure 15. Gate Charge
CEM2539A
102
RDS(ON)Limit
101
100
10ms
100ms
1s
DC
5
10-1
TA=25 C
TJ=150 C
10-2
Single
10-2
Pulse
10-1
100
101
102
VDS, Drain-Source Voltage (V)
Figure 14. Maximum Safe
Operating Area
102
RDS(ON)Limit
101
100
10ms
100ms
1s
DC
10-1
TA=25 C
TJ=150 C
10-2 Single Pulse
10-2 10-1 100 101 102
-VDS, Drain-Source Voltage (V)
Figure 16. Maximum Safe
Operating Area
6
Datasheet pdf - http://www.DataSheet4U.net/

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