(PDF) CEJ8218 Datasheet - Dual N-Channel Enhancement Mode Field Effect Transistor

Número de pieza	CEJ8218
Descripción	Dual N-Channel Enhancement Mode Field Effect Transistor
Fabricantes	CET
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No Preview Available ! www.DataSheet.co.kr CEJ8218 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. DD 1K G1 1K G2 S1 *Typical value by design DDDD 8765 S2 2928-8J 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 6.5 IDM 25 Maximum Power Dissipation PD 1.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 83 Units V V A A W C Units C/W Details are subject to change without notice . 1 Rev 2. 2007.July http://www.cetsemi.com Datasheet pdf - http://www.DataSheet4U.net/ 1 page

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PDF CEJ8218 Data sheet ( Hoja de datos )