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Teilenummer | DMN3050S |
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Beschreibung | N-CHANNEL ENHANCEMENT MODE MOSFET | |
Hersteller | Diodes | |
Logo | ||
Gesamt 5 Seiten www.DataSheet.co.kr
NOT RECOMMENDED FOR NEW
DESIGN, USE DMN3404L
DMN3050S
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance:
35mΩ @ VGS = 10V
50mΩ @ VGS = 4.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q 101 Standards for High Reliability
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23
Drain
D
Gate
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Drain Current (Note 1)
Body-Diode Continuous Current (Note 1)
TA = 25°C
TA = 70°C
Pulsed
Source
Equivalent Circuit
Symbol
VDSS
VGSS
ID
IDM
IS
GS
TOP VIEW
Value
30
±20
5.2
4.2
20
2.0
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 4)
BVDSS
IDSS
IGSS
30
⎯
⎯
⎯ ⎯V
⎯ 1 μA
⎯
±100
nA
Gate Threshold Voltage
Static Drain-Source On-Resistance
VGS(th)
1
1.5
3
V
RDS (ON)
⎯
⎯
27
40
35
50
mΩ
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
gfs ⎯ 6.5 ⎯ S
VSD ⎯
0.7
1
V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss ⎯ 390 ⎯ pF
Coss
⎯
55
⎯ pF
Crss
⎯
45
⎯ pF
Notes:
1. Device mounted on FR-4 PCB. t ≤5 sec.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
Test Condition
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 5.2A
VGS = 4.5V, ID = 4.2A
VDS = 5V, ID = 5.2A
VGS = 0V, IS = 1.0A
VDS = 15V, VGS = 0V
f = 1.0MHz
DMN3050S
Document number: DS31503 Rev. 4 - 3
1 of 5
www.diodes.com
June 2009
© Diodes Incorporated
Datasheet pdf - http://www.DataSheet4U.net/
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ DMN3050S Schematic.PDF ] |
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