|
|
PDF W21NM60N Data sheet ( Hoja de datos )
| Número de pieza | W21NM60N | |
| Descripción | STW21NM60N | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de W21NM60N (archivo pdf) en la parte inferior de esta página. Total 18 Páginas | ||
|
No Preview Available !
www.DataSheet.co.kr
STP/F21NM60N-STW21NM60N
STB21NM60N-STB21NM60N-1
N-channel 600V - 0.17Ω - 17A TO-220/FP/D2/I2PAK/TO-247
Second generation MDmesh™ Power MOSFET
Features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
650V
650V
650V
650V
650V
< 0.22Ω
< 0.22Ω
< 0.22Ω
< 0.22Ω
< 0.22Ω
17A
17A
17A(1)
17A
17A
1. Limited by wire bonding
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Description
This series of devices implements the second
generation of MDmesh™ Technology. This
revolutionary Power MOSFET associates a new
vertical structure to the Company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters
Applications
■ Switching application
3
2
1
TO-220
3
2
1
TO-220FP
3
1
D2PAK
123
I2PAK
TO-247
Internal schematic diagram
Order codes
Part number
STB21NM60N
STB21NM60N-1
STF21NM60N
STP21NM60N
STW21NM60N
April 2007
Marking
B21NM60N
B21NM60N
F21NM60N
P21NM60N
W21NM60N
Package
D2PAK
I2PAK
TO-220FP
TO-220
TO-247
Rev 6
Packaging
Tape & reel
Tube
Tube
Tube
Tube
1/18
www.st.com
18
Datasheet pdf - http://www.DataSheet4U.net/
1 page  
www.DataSheet.co.kr
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Electrical characteristics
Table 6. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
ISDM (1)
VSD (2)
trr
Qrr
IRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17A, VGS = 0
ISD = 17A, VDD = 100V
di/dt=100A/µs
(see Figure 19)
ISD = 17A,VDD = 100V
di/dt=100A/µs,
Tj = 150°C
(see Figure 19)
1. Pulse width limited by safe operating area
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
17
68
0.91
372
4.6
25
A
A
V
ns
µC
A
486 ns
6.3 µC
26 A
5/18
Datasheet pdf - http://www.DataSheet4U.net/
5 Page 
www.DataSheet.co.kr
STP/F21NM60N - STB21NM60N - STB21NM60N-1 - STW21NM60N
Package mechanical data
DIM.
A
b
b1
c
D
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
MIN.
4.40
0.61
1.15
0.49
15.25
10
2.40
4.95
1.23
6.20
2.40
13
3.50
3.75
2.65
TO-220 MECHANICAL DATA
mm.
TYP
16.40
28.90
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
3.93
3.85
2.95
MIN.
0.173
0.024
0.045
0.019
0.60
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
0.147
0.104
inch
TYP.
0.645
1.137
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
0.151
0.116
11/18
Datasheet pdf - http://www.DataSheet4U.net/
11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet W21NM60N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| W21NM60N | STW21NM60N | STMicroelectronics |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |