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GB200TS60NPBF Schematic ( PDF Datasheet ) - Vishay Siliconix

Teilenummer GB200TS60NPBF
Beschreibung Ultrafast Speed IGBT
Hersteller Vishay Siliconix
Logo Vishay Siliconix Logo 




Gesamt 9 Seiten
GB200TS60NPBF Datasheet, Funktion
www.DataSheet.co.kr
GB200TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
INT-A-PAK
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 200 A, 25 °C
600 V
209 A
2.6 V
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching speed
8 kHz to 60 kHz
• Low VCE(on)
• 10 μs short circuit capability
• Square RBSOA
• Positive VCE(on) temperature coefficient
• HEXFRED® antiparallel diode with ultrasoft reverse
recovery characteristics
• Industry standard package
• Al2O3 DBC
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed for industrial level
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Clamped inductive load current
ICM
ILM
Diode continuous forward current
IF
Gate to emitter voltage
VGE
Maximum power dissipation
PD
Isolation voltage
VISOL
TEST CONDITIONS
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
TC = 25 °C
TC = 80 °C
Any terminal to case, t = 1 minute
MAX.
600
209
142
400
400
178
121
± 20
781
438
2500
UNITS
V
A
V
W
V
Document Number: 94503
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/






GB200TS60NPBF Datasheet, Funktion
www.DataSheet.co.kr
GB200TS60NPbF
Vishay High Power Products INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 209 A
1
0.1 D = 0.5
D = 0.2
D = 0.1
0.01
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Response)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
1E+01
t1 , Rectangular Pulse Duration (sec)
Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
1
D = 0.5
0.1
D = 0.2
0.01
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Single Pulse
(Thermal Response)
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x ZthJC + Tc
0.001
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 , Rectangular Pulse Duration (sec)
Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (HEXFRED®)
www.vishay.com
6
For technical questions, contact: [email protected]
Document Number: 94503
Revision: 04-May-10
Datasheet pdf - http://www.DataSheet4U.net/

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