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PDF GA100TS60SF Data sheet ( Hoja de datos )
| Número de pieza | GA100TS60SF | |
| Descripción | Standard Speed IGBT | |
| Fabricantes | International Rectifier | |
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Bulletin I27201 rev. A 01/06
"HALF-BRIDGE" IGBT INT-A-PAK
Features
• Standard Speed PT Igbt Technology
• Fred PT Antiparallel diodes with Fast
recovery
• Very Low Conduction Losses
• Al2O3 DBC
• UL Pending
GA100TS60SF
Standard Speed IGBT
VCES = 600V
IC = 220A DC
VCE(on) typ. = 1.39V
@ IC = 200A TJ = 25°C
Benefits
• Optimized for high current inverter
stages (AC TIG welding machines)
• Direct mounting to heatsink
• Hard switching operation frequency
up to 1 KHz
• Very low junction-to-case thermal
resistance
• Low EMI
INT-A-PAK
Absolute Maximum Ratings
Parameters
VCES
IC
ICM
ILM
VGE
VISOL
PD
Collector-to-Emitter Voltage
Continuos Collector Current
Pulsed Collector Current
@ TC = 25°C
@ TC = 130°C
Peak Switching Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Maximum Power Dissipation
@ TC = 25°C
@ TC = 100°C
www.irf.com
Max
600
220
100
440
440
± 20
2500
780
312
Units
V
A
V
W
1
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1 page  
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1000
100 Tj = 125˚C
10 Tj = 25˚C
GA100TS60SF
Bulletin I27201 rev. A 01/06
1000
Vr = 200V
If = 50A, Tj = 125˚C
100
If = 50A, Tj = 25˚C
1
0 0.5 1 1.5 2 2.5
Forward Voltage Drop- VFM (V)
Fig. 8 - Maximum Forward Voltage Drop
vs. Instantaneous Forward Current
10
100
dif /dt - A/µs
1000
Fig. 9 - Typical Reverse Recovery vs. dif /dt
100
Vr = 200V
If = 50A, Tj = 125˚C
10000
Vr = 200V
If = 50A, Tj = 125˚C
10
If = 50A, Tj = 25˚C
1000
If = 50A, Tj = 25˚C
1
100
dif /dt - A/µs
1000
Fig. 10 - Typical Reverse Recovery Current
vs. dif /dt
www.irf.com
100
100
dif /dt - A/µs
1000
Fig. 11 - Typical Stored Charge vs. dif /dt
5
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5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet GA100TS60SF.PDF ] | |
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