Datenblatt-pdf.com


GA100TS120UPBF Schematic ( PDF Datasheet ) - Vishay Siliconix

Teilenummer GA100TS120UPBF
Beschreibung IGBT
Hersteller Vishay Siliconix
Logo Vishay Siliconix Logo 




Gesamt 10 Seiten
GA100TS120UPBF Datasheet, Funktion
www.DataSheet.co.kr
GA100TS120UPbF
Vishay High Power Products
"Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 100 A
INT-A-PAK
FEATURES
• Generation 4 IGBT technology
• Ultrafast: Optimized for high speed 8 kHz to
40 kHz in hard switching, > 200 kHz in resonant
mode
• Very low conduction and switching losses
• HEXFRED® antiparallel diodes with ultrasoft recovery
• Industry standard package
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
PRODUCT SUMMARY
VCES
IC DC
VCE(on) at 100 A, 25 °C
1200 V
182 A
2.25 V
BENEFITS
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, welding
• Lower EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Collector to emitter voltage
VCES
Continuous collector current
IC
Pulsed collector current
Peak switching current
See fig. 17
Peak diode forward current
Gate to emitter voltage
RMS isolation voltage
Maximum power dissipation
Operating junction temperature range
Storage temperature range
ICM
ILM
IFM
VGE
VISOL
PD
TJ
TStg
TEST CONDITIONS
TC = 25 °C
TC = 93 °C
Repetitive rating; VGE = 20 V, pulse width
limited by maximum junction temperature
Any terminal to case, t = 1 minute
TC = 25 °C
TC = 85 °C
MAX.
1200
182
100
200
200
200
± 20
2500
520
270
- 40 to + 150
- 40 to + 125
UNITS
V
A
V
W
°C
Document Number: 94428
Revision: 04-May-10
For technical questions, contact: [email protected]
www.vishay.com
1
Datasheet pdf - http://www.DataSheet4U.net/






GA100TS120UPBF Datasheet, Funktion
www.DataSheet.co.kr
GA100TS120UPbF
Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK
(Ultrafast Speed IGBT), 100 A
240
VR = 720 V
TJ = 125 °C
TJ = 25 °C
200 IF = 200 A
IF = 100 A
IF = 50 A
160
120
80
400
800
1200
1600
2000
dIF/dt (A/µs)
Fig. 15 - Typical Reverse Recovery Time vs. dIF/dt
250
200
IF = 200 A
IF = 100 A
IF = 50 A
150
100
50
0
400
VR = 720 V
TJ = 125 °C
TJ = 25 °C
800
1200
1600
2000
dIF/dt (A/µs)
Fig. 16 - Typical Recovery Current vs. dIF/dt
L2
L1
+
- VCC
-
+
+ VG2
- VG2
RG2
RG1
RG2
RG1
L
L3 VCC = 60 % of BVCES
LS = L1 + L2 + L3
VGE = ± 15 V
Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr,
Irr, td(on), tr, td(off), tf
10 % + VG
Gate voltage D.U.T.
+ VG
VCC 10 % IC
VCE
td(on)
tr
90 % IC
5 % VCE
t1
D.U.T. voltage
and current
Ipk IC
t2
Eon = VCE IC dt
t1
t2
Fig. 17c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
+ VGE
IC 10 % VCE
td(off)
90 % VGE
VCE
90 % IC
IC
5 % IC
tf
t1 + 5 µs
Eoff = VVcCeEicICdtdt
t1
t1 t2
Fig. 17b - Test Waveforms for Circuit of Fig. 18a,
Defining Eoff, td(off), tf
IC
tx
10 % VCC
Vpk Irr
trr
trr
Qrr = iIdC ddtt
tx
10 % Irr
VCC
Diode recovery
waveforms
Diode reverse
recovery energy
t3
t4
Erec = VD IC dt
t3
t4
Fig. 17d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
www.vishay.com
6
For technical questions, contact: [email protected]
Document Number: 94428
Revision: 04-May-10
Datasheet pdf - http://www.DataSheet4U.net/

6 Page







SeitenGesamt 10 Seiten
PDF Download[ GA100TS120UPBF Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
GA100TS120UPBFIGBTVishay Siliconix
Vishay Siliconix

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche