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P5NC50 Schematic ( PDF Datasheet ) - ST Microelectronics

Teilenummer P5NC50
Beschreibung STP5NC50
Hersteller ST Microelectronics
Logo ST Microelectronics Logo 




Gesamt 12 Seiten
P5NC50 Datasheet, Funktion
www.DataSheet.co.kr
STP5NC50 - STP5NC50FP
STB5NC50 - STB5NC50-1
N-CHANNEL 500V - 1.3- 5.5A TO-220/FP/D2PAK/I2PAK
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP5NC50
STP5NC50FP
STB5NC50
STB5NC50-1
500 V
500 V
500 V
500 V
< 1.5
< 1.5
< 1.5
< 1.5
5.5A
5.5A
5.5A
5.5A
s TYPICAL RDS(on) = 1.3
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESHII is the evolution of the first
generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area
figure of merit while keeping the device at the lead-
ing edge for what concerns swithing speed, gate
charge and ruggedness.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVES
TO-220
3
1
D2PAK
TO-220FP
123
I2PAK
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
VISO
Insulation Withstand Voltage (DC)
Tj Operating Junction Temperature
Tstg Storage Temperature
(•)Pulse width limited by safe operating area
(1)ISD 5.5A, di/dt 100A/µs, VDD V(BR)DSS, Tj TJMAX.
December 2002
Value
STP5NC50
STB5NC50/-1
STP5NC50FP
500
500
±30
5.5 5.5(*)
3.5 3.5(*)
22 22
100 35
0.8 0.28
3.5
- 2500
-55 to 175
-65 to 175
(*)Limited only by maximum temperature allowed
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
°C
1/12
Datasheet pdf - http://www.DataSheet4U.net/






P5NC50 Datasheet, Funktion
www.DataSheet.co.kr
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuit For
Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
6/12
Datasheet pdf - http://www.DataSheet4U.net/

6 Page









P5NC50 pdf, datenblatt
www.DataSheet.co.kr
STP5NC50 - STP5NC50FP - STB5NC50 - STB5NC50-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or
systems without express written approval of STMicroelectronics.
© The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
© http://www.st.com
12/12
Datasheet pdf - http://www.DataSheet4U.net/

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