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PDF ECH8661 Data sheet ( Hoja de datos )
| Número de pieza | ECH8661 | |
| Descripción | N-Channel and P-Channel Silicon MOSFETs | |
| Fabricantes | Sanyo Semicon Device | |
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Ordering number : ENA1777
ECH8661
SANYO Semiconductors
DATA SHEET
ECH8661
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
Features
• ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.)
• The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
• 4V drive
• Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
N-channel P-channel
30 --30
±20 ±20
7 --5.5
40 --40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TG
TL LOT No.
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
Electrical Connection
87 6 5
1234
http://semicon.sanyo.com/en/network
72110PE TK IM TC-00002431 No. A1777-1/6
Datasheet
1 page  
www.DataSheet.co.kr
ECH8661
RDS(on) -- VGS
[Pch]
200
Ta=25°C
180
160 ID= --1.5A
140 --2.5A
120
100
80
60
40
20
0
0 --2 --4 --6 --8 --10 --12 --14 --16
2
Gate-to-Source
| yfs
V| ol-t-ageID, VGS
--
V
IT15727
[Pch]
VDS= --10V
10
7
5
3
2
1.0
7
Ta= --25°C
75°C
25°C
5
3
2
0.1
7
--0.01
23
100
7
5
5 7 --0.1 2 3 5 7 --1.0
Drain
SW
Current,
Time
I-D-
-- A
ID
td(off)
tf
2 3 57
IT14859
[Pch]
3
2
tr
10
7 td(on)
5
3
--0.1
23
--10
VDS= --10V
--9 ID= --5.5A
--8
VDD= --15V
VGS= --10V
5 7 --1.0
23
5 7 --10
2
Drain Current,
VGS --
IQDg--
A
IT14861
[Pch]
--7
--6
--5
--4
--3
--2
--1
0
0 1 2 3 4 5 6 7 8 9 10 11 12 13
Total Gate Charge, Qg -- nC
IT15733
RDS(on) -- Ta
[Pch]
100
90
80
70
60
50
40
V GVSV=GGS--=4S.=-0-4V--.,51IV0D.,0=IVD--,=1I.D5--A1=.5--A2.5A
30
20
10
--60 --40 --20 0
20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C IT15728
2
IS -- VSD
[Pch]
--10 VGS=0V
7
5
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
7
5
3
2
--0.001
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
2
Diode
Ciss,
Forward Voltage,
Coss, Crss
V-S-DV--DVS
IT14860
[Pch]
f=1MHz
1000
7
5
Ciss
3
2
Coss
100 Crss
7
5
0 --5 --10 --15 --20 --25 --30
Drain-to-Source
A
Voltage,
SO
VDS
--
V
--100
7
5
IDP= --40A (PW≤10μs)
IT14862
[Pch]
3
2
--10
7
5
3
2
--1.0
7
5
3
2
ID= --5.5A
1ms 100μs
10ms
Operation in this
area is limited by
RDDCSo(poenr)a.tio1n00(mTas=25°C)
--0.1
7
5
3
2
Ta=25°C
Single pulse
When mounted on ceramic substrate
--0.01 (900mm2×0.8mm) 1unit
--0.1 2 3 5 7 --1.0 2 3 5 7 --10
23
5
Drain-to-Source Voltage, VDS -- V IT15729
No. A1777-5/6
Datasheet pdf - http://www.DataSheet4U.net/
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet ECH8661.PDF ] | |
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