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PDF 80NF75L Data sheet ( Hoja de datos )
| Número de pieza | 80NF75L | |
| Descripción | STP80NF75L | |
| Fabricantes | STMicroelectronics | |
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STP80NF75L
STB80NF75L STB80NF75L-1
N-CHANNEL 75V - 0.008 Ω - 80A TO-220/D2PAK/I2PAK
STripFET™ II POWER MOSFET
TYPE
VDSS
RDS(on)
STP80NF75L
STB80NF75L
STB80NF75L-1
75 V
75 V
75 V
<0.01 Ω
<0.01 Ω
<0.01 Ω
s TYPICAL RDS(on) = 0.008 Ω
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW THRESHOLD DRIVE
ID
80 A
80 A
80 A
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SWITCHING SPEED
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
s SOLENOID AND RELAY DRIVERS
3
1
D2PAK
TO-263
123
I2PAK
TO-262
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS Gate- source Voltage
ID(•)
Drain Current (continuos) at TC = 25°C
ID Drain Current (continuos) at TC = 100°C
IDM(••) Drain Current (pulsed)
Ptot Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (2) Single Pulse Avalanche Energy
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•)Current Limited by Package
(••) Pulse width limited by safe operating area.
November 2001
.
Value
75
75
± 16
80
80
320
300
2
12
930
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) ISD ≤80A, di/dt ≤960A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
(2) Starting Tj = 25 oC, ID = 40A, VDD= 40V
1/11
www.DataSheet4U.net
1 page  
Normalized Gate Threshold Voltage vs Temperature
STB80NF75L/-1/ STP80NF75L
Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
..
5/11
5 Page 
STB80NF75L/-1/ STP80NF75L
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is registered trademark of STMicroelectronics
® 2001 STMicroelectronics - All Rights Reserved
All other names are the property of their respective owners.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
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| PDF Descargar | [ Datasheet 80NF75L.PDF ] | |
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