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PDF CDBFN1100-G Data sheet ( Hoja de datos )
| Número de pieza | CDBFN1100-G | |
| Descripción | (CDBFN120-G - CDBFN1100-G) SMD Schottky Barrier Rectifiers | |
| Fabricantes | Comchip Technology | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de CDBFN1100-G (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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SMD Schottky Barrier Rectifiers
CDBFN120-G Thru CDBFN1100-G
Voltage: 20 to 100 Volts
Current: 1.0 Amp
RoHS Device
SMD Diodes Specialist
Features
SOD-323
-Batch process design, excellent powe
dissipation offers better reverse leakage
current .
-Low profile surface mounted application
in order to optimize board space.
0.106 (2.70)
0.091 (2.3)
0.012(0.3) Typ.
-Low power loss, high efficiency.
-High current capability, low forward voltage
dorp.
-High surge capability.
0.057 (1.45)
0.041 (1.05)
-Guardring for overvoltage protection.
-Very iny plastic SMD package.
-Ultra high-speed switching.
-Silicon epitaxial planarchip, metal silicon
junction.
-Lead-free parts meet environmental
standards of MIL-STD-19500 /228
Mechanical data
0.016(0.4) Typ.
0.047 (1.2)
0.031 (0.8)
0.016(0.4) Typ.
-Case: JEDEC SOD-323, Molded plastic
-Terminals: Solde plated, solderable per
MIL-STD-750, method 2026.
-Polarity: Indicated by cathode band.
-Mounting position: Any
-Weight:0.008 gram(approx.).
Maximum Ratings(at TA=25
Dimensions in inches and (millimeter)
OC unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Symbol
CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN CDBFN
120-G 130-G 140-G 150-G 160-G 180-G 1100-G
Unit
VRRM 20 30 40 50 60 80 100 V
Maximum RMS voltage
VRMS 14 21 28 35 42 56 70 V
Continuous reverse voltage
VR 20 30 40 50 60 80 100 V
Maximum forward voltage @IF=1.0A
VF 0.55
0.70 0.85 V
Forward rectified current
IO
1.0 A
Forward surge current, 8.3ms half sine wave
superimposed on rated load (JEDEC method)
Reverse current on VR=VRRM
O
@TA=25 C
O
@TA=125 C
Typ. thermal resistance, junction to ambient air
IFSM
IR
RθJA
30 A
0.5
10
mA
90 OC/W
Typ. diode junction capacitance (Note 1)
CJ
120 pF
Operating junction temperature
TJ -55 to +125
-55 to +150
OC
Storage temperature
Note 1: f=1MHz and applied 4V DC reverse voltage.
TSTG
-65 to +150
OC
www.DQatWaS-BhBe0e2t42U.net
Comchip Technology CO., LTD.
REV:D
Page 1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet CDBFN1100-G.PDF ] | |
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