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PDF APTM50DSK10T3G Data sheet ( Hoja de datos )
| Número de pieza | APTM50DSK10T3G | |
| Descripción | Dual Buck chopper MOSFET Power Module | |
| Fabricantes | Microsemi Corporation | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de APTM50DSK10T3G (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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APTM50DSK10T3G
Dual Buck chopper
MOSFET Power Module
VDSS = 500V
RDSon = 100mΩ typ @ Tj = 25°C
ID = 37A @ Tc = 25°C
13 14
Q1 Q2
Application
• AC and DC motor control
• Switched Mode Power Supplies
18
19
CR 1
22 7
23 8
11
10
CR2
29 30
15
31
R1
32
16
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
• Internal thermistor for temperature monitoring
• High level of integration
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
2 34
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• Each leg can be easily paralleled to achieve a single
buck of twice the current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Tc = 80°C
Tc = 25°C
Max ratings
500
37
28
140
±30
120
312
37
50
1600
Unit
V
A
V
mΩ
W
A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.DataSheet4U.net
www.microsemi.com
1-7
1 page  
APTM50DSK10T3G
Typical Performance Curve
0.45
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.4 0.9
0.35
0.3
0.7
0.25 0.5
0.2
0.15
0.3
0.1 0.1
0.05 0.05
0
0.00001
0.0001
Single Pulse
0.001
0.01
0.1
rectangular Pulse Duration (Seconds)
1
10
Low Voltage Output Characteristics
140
120 VGS=10&15V
8V
7.5V
100
80 7V
60 6.5V
40 6V
20 5.5V
0
0 5 10 15 20 25
VDS, Drain to Source Voltage (V)
1.20
1.15
RDS(on) vs Drain Current
Normalized to
VGS=10V @ 18.5A
VGS=10V
1.10
1.05
1.00
VGS=20V
0.95
0.90
0
20 40 60
ID, Drain Current (A)
80
Transfert Characteristics
120
VDS > ID(on)xRDS(on)MAX
100 250µs pulse test @ < 0.5 duty cycle
80
60
40 TJ=25°C
20
0
0
TJ=125°C
TJ=-55°C
1234567
VGS, Gate to Source Voltage (V)
8
DC Drain Current vs Case Temperature
40
30
20
10
0
25 50 75 100 125 150
TC, Case Temperature (°C)
www.microsemi.com
5-7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet APTM50DSK10T3G.PDF ] | |
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