|
|
PDF P18N50 Data sheet ( Hoja de datos )
| Número de pieza | P18N50 | |
| Descripción | FDP18N50 | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de P18N50 (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
|
No Preview Available !
FDP18N50 / FDPF18N50
500V N-Channel MOSFET
Features
• 18A, 500V, RDS(on) = 0.265Ω @VGS = 10 V
• Low gate charge ( typical 45 nC)
• Low Crss ( typical 25 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
www.DataSheet4U.net
April 2007
UniFETTM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
D
GDS
TO-220
FDP Series
GD S
TO-220F
FDPF Series
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
* Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
RθJC
RθCS
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
FDP18N50 FDPF18N50
500
18 18 *
10.8 10.8 ∗
72 72 ∗
±30
945
18
23.5
4.5
235 38.5
1.88 0.3
-55 to +150
300
FDP18N50
0.53
0.5
62.5
FDPF18N50
3.3
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2007 Fairchild Semiconductor Corporation
FDP18N50 / FDPF18N50 Rev. B
1
www.fairchildsemi.com
1 page  
Typical Performance Characteristics (Continued)
Figure 11-1. Transient Thermal Response Curve - FDP18N50
100
D =0.5
1 0 -1
1 0 -2
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
single pulse
PDM
* N o te s :
t1
t2
1 . Z θJC(t) = 0.53 oC /W M ax.
2 . D u ty F actor, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t , S q u a re W a ve P u ls e D u ra tio n [s e c ]
1
101
Figure 11-2. Transient Thermal Response Curve - FDPF18N50
D =0.5
100
0 .2
0 .1
0 .0 5
1 0 -1
0 .0 2
0 .0 1
1 0 -2 s in g le p u ls e
PDM
* N o te s :
t1
t2
1 . Z θJC(t) = 3.3 oC /W M ax.
2 . D u ty F actor, D = t1/t2
3 . T JM - T C = P DM * Z θJC(t)
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S q u a re W a ve P u ls e D u ra tio n [s e c ]
101
FDP18N50 / FDPF18N50 Rev. B
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet P18N50.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| P18N50 | FDP18N50 | Fairchild Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |