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PDF PCHMB200B12A Data sheet ( Hoja de datos )
| Número de pieza | PCHMB200B12A | |
| Descripción | IGBT MODULE | |
| Fabricantes | Nihon Inter Electronics | |
| Logotipo |  |
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IGBT MODULE Chopper 200A 1200V
CIRCUIT
PCHMB200B12A
OUTLINE DRAWING
2- fasten- tab No 110
Dimension(mm)
MAXMUM RATINGS (Tc=25°C)
Item
Symbol
PCHMB200B12A
Collector-Emitter Voltage
Gate - Emitter Voltage
Collector Current
DC
1 ms
Collector Power Dissipation
Junction Temperature Range
Storage Temperature Range
Isolation Voltage Terminal to Base AC, 1 min.)
Mounting Torque
Module Base to Heatsink
Bus Bar to Main Terminals
VCES
VGES
IC
ICP
PC
Tj
Tstg
VISO
FTOR
1200
+/ - 20
200
400
960
-40 to +150
-40 to +125
2500
3
2
ELECTRICAL CHARACTERISTICS (Tc=25°C)
Characteristic
Symbol
Test Condition
Min.
Collector-Emitter Cut-Off Current
ICES VCE=1200V,VGE=0V
-
Gate-Emitter Leakage Current
IGES VGE=+/- 20V,VCE=0V
-
Collector-Emitter Saturation Voltage
VCE(sat) IC=200A,VGE=15V
-
Gate-Emitter Threshold Voltage
VGE(th) VCE=5V,IC=200mA
4.0
Input Capacitance
Cies VCE=10V,VGE=0V,f=1MHz
-
Switching Time
Rise Time
Turn-on Time
Fall Time
Turn-off Time
tr VCC= 600V
ton RL= 3 ohm
tf RG= 2 ohm
toff VGE= +/- 15V
-
-
-
-
FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)
Item
Symbol
Rated Value
Forward Current
DC
1 ms
IF
IFM
200
400
Approximate Weight : 320g
Unit
V
V
A
W
°C
°C
V
N•m
Typ.
-
-
1.9
-
16600
0.25
0.40
0.25
0.80
Max.
4.0
1.0
2.4
8.0
-
0.45
0.70
0.35
1.10
Unit
mA
µA
V
V
pF
µs
Unit
A
Characteristic
Symbol
Peak Forward Voltage
Reverse Recovery Time
VF
trr
THERMAL CHARACTERISTICS
Characteristic
Thermal Impedance
IGBT
DIODE
Test Condition
IF=200A,VGE=0V
IF=200A,VGE=-10V,di/dt=400A/µs
Symbol
Rth(j-c)
Test Condition
Junction to Case
Min. Typ. Max. Unit
- 1.9 2.4 V
- 0.2 0.3 µs
Min. Typ. Max. Unit
-
-
-
-
0.125
0.24
°C/W
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet PCHMB200B12A.PDF ] | |
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