PESD5V0X1UALD Datasheet PDF - NXP Semiconductors
| Part Number | PESD5V0X1UALD | |
| Description | Ultra low capacitance unidirectional ESD protection diode | |
| Manufacturers | NXP Semiconductors | |
| Logo |  |
|
|
There is a preview and PESD5V0X1UALD download ( pdf file ) link at the bottom of this page. Total 12 Pages | ||
Preview 1 page No Preview Available !
PESD5V0X1UALD
Ultra low capacitance unidirectional ESD protection diode
Rev. 1 — 5 April 2011
Product data sheet
1. Product profile
www.DataSheet4U.net
1.1 General description
Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line from the damage caused by ESD and other transients.
The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD)
plastic package with visible and solderable side pads.
1.2 Features and benefits
ESD protection of one line
Ultra low diode capacitance
Cd = 1.55 pF
Ultra small SMD plastic package
Solderable side pads
Package height typ. 0.37 mm
Ultra low leakage current: IRM = 1 nA
ESD protection up to 15 kV
IEC 61000-4-2; level 4 (ESD)
Low clamping voltage: VCL = 9 V
IEC 61000-4-5 (surge); IPP = 2 A
AEC-Q101 qualified
1.3 Applications
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
10/100/1000 Mbit/s Ethernet
Communication systems
Portable electronics
Subscriber Identity Module (SIM) card
protection
USB, High-Definition Multimedia
Interface (HDMI), FireWire
High-speed data lines
1.4 Quick reference data
Table 1.
Symbol
VRWM
Cd
Quick reference data
Parameter
reverse standoff voltage
diode capacitance
Conditions
f = 1 MHz; VR = 0 V
Min Typ Max Unit
- - 5.5 V
- 1.55 1.75 pF
|
| |
 
NXP Semiconductors
PESD5V0X1UALD
Ultra low capacitance unidirectional ESD protection diode
6. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VRWM
reverse standoff
voltage
IRM reverse leakage current VRWM = 5.5 V
VBR breakdown voltage IR = 10 mA
Cd diode capacitance f = 1 MHz; VR = 0 V
VCL clamping voltage
IPP = 2 A
rdyn
dynamic resistance
IR = 10 A
Min
-
-
5.8
-
[1][2] -
[3] -
Typ Max Unit
- 5.5 V
1 100 nA
7.5 10
V
1.55 1.75 pF
- 9V
0.15 -
Ω
[1] Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 2.
[3] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANS/IESD STM5-1-2008.
1.7
Cd
(pF)
1.6
006aac514
1.5
1.4
1.3
1.2
1.1
1.0www.DataSheet4U.net
0.0 1.0 2.0 3.0 4.0 5.0
VR (V)
Fig 4.
f = 1 MHz; Tamb = 25 °C
Diode capacitance as a function of reverse
voltage; typical values
I
−VCL −VBR −VRWM
−+
P-N
−IRM
−IR
V
−IPP
006aaa407
Fig 5. V-I characteristics for a unidirectional
ESD protection diode
PESD5V0X1UALD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 5 April 2011
© NXP B.V. 2011. All rights reserved.
5 of 12
Preview 5 Page |
Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for PESD5V0X1UALD electronic component. |
| Information | Total 12 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ PESD5V0X1UALD.PDF Datasheet ] | |
Share Link :
Electronic Components Distributor
|
An electronic components distributor is a company that sources, stocks, and sells electronic components to manufacturers, engineers, and hobbyists. |
| SparkFun Electronics | Allied Electronics | DigiKey Electronics | Arrow Electronics |
| Mouser Electronics | Adafruit | Newark | Chip One Stop |
Featured Datasheets
| Part Number | Description | MFRS |
| PESD5V0X1UALD | The function is Ultra low capacitance unidirectional ESD protection diode. NXP Semiconductors | |
Semiconductors commonly used in industry:
1N4148 |
BAW56 |
1N5400 |
NE555 | | ||
Quick jump to:
PESD
1N4
2N2
2SA
2SC
74H
BC
HCF
IRF
KA | ||