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Teilenummer | DE275-201N25A |
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Beschreibung | RF Power MOSFET | |
Hersteller | IXYS Corporation | |
Logo | ||
Gesamt 5 Seiten DE275-201N25A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
Symbol Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
dv/dt
IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS,
Tj ≤ 150°C, RG = 0.2Ω
Maximum Ratings
200 V
200 V
±20 V
±30 V
25 A
150 A
25 A
20 mJ
5 V/ns
VDSS
ID25
RDS(on)
PDC
=
=
=
=
GATE
200 V
25 A
0.13 Ω
590 W
DRAIN
IS = 0
>200 V/ns
PDC
PDHS
PDAMB
RthJC
RthJHS
Symbol
Tc = 25°C
Derate 1.9W/°C above 25°C
Tc = 25°C
Test Conditions
590 W
284 W
3.0 W
0.25 C/W
0.53 C/W
Characteristic Values
TJ = 25°C unless otherwise specified
min.
typ. max.
VDSS
VGS(th)
IGSS
IDSS
VGS = 0 V, ID = 3 ma
VDS = VGS, ID = 250µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
200 V
2.5 3.0 5.5 V
±100 nA
50 µA
1 mA
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t ≤ 300µS, duty cycle d ≤ 2%
.13 Ω
gfs VDS = 15 V, ID = 0.5ID25, pulse test
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TJ
13 16 18 S
-55 +175 °C
SG1 SG2
SD1 SD2
Features
• Isolated Substrate
− high isolation voltage (>2500V)
− excellent thermal transfer
− Increased temperature and power
cycling capability
• IXYS advanced low Qg process
• Low gate charge and capacitances
− easier to drive
− faster switching
• Low RDS(on)
• Very low insertion inductance (<2nH)
• No beryllium oxide (BeO) or other
hazardous materials
Advantages
• Optimized for RF and high speed
switching at frequencies to 100MHz
• Easy to mount—no insulators needed
• High power density
TJM 175 °C
Tstg -55 +175 °C
TL 1.6mm(0.063 in) from case for 10 s
300 °C
Weight
2g
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ DE275-201N25A Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
DE275-201N25A | RF Power MOSFET | IXYS Corporation |
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