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DE275-201N25A Schematic ( PDF Datasheet ) - IXYS Corporation

Teilenummer DE275-201N25A
Beschreibung RF Power MOSFET
Hersteller IXYS Corporation
Logo IXYS Corporation Logo 




Gesamt 5 Seiten
DE275-201N25A Datasheet, Funktion
DE275-201N25A
RF Power MOSFET
N-Channel Enhancement Mode
Low Qg and Rg
High dv/dt
Nanosecond Switching
Ideal for Class C, D, & E Applications
Symbol Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
Tc = 25°C
Tc = 25°C, pulse width limited by TJM
Tc = 25°C
Tc = 25°C
dv/dt
IS IDM, di/dt 100A/µs, VDD VDSS,
Tj 150°C, RG = 0.2
Maximum Ratings
200 V
200 V
±20 V
±30 V
25 A
150 A
25 A
20 mJ
5 V/ns
VDSS
ID25
RDS(on)
PDC
=
=
=
=
GATE
200 V
25 A
0.13
590 W
DRAIN
IS = 0
>200 V/ns
PDC
PDHS
PDAMB
RthJC
RthJHS
Symbol
Tc = 25°C
Derate 1.9W/°C above 25°C
Tc = 25°C
Test Conditions
590 W
284 W
3.0 W
0.25 C/W
0.53 C/W
Characteristic Values
TJ = 25°C unless otherwise specified
min.
typ. max.
VDSS
VGS(th)
IGSS
IDSS
VGS = 0 V, ID = 3 ma
VDS = VGS, ID = 250µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS TJ = 25°C
VGS = 0
TJ = 125°C
200 V
2.5 3.0 5.5 V
±100 nA
50 µA
1 mA
RDS(on)
VGS = 15 V, ID = 0.5ID25
Pulse test, t 300µS, duty cycle d 2%
.13
gfs VDS = 15 V, ID = 0.5ID25, pulse test
www.DataSheet4U.com
TJ
13 16 18 S
-55 +175 °C
SG1 SG2
SD1 SD2
Features
Isolated Substrate
high isolation voltage (>2500V)
excellent thermal transfer
Increased temperature and power
cycling capability
IXYS advanced low Qg process
Low gate charge and capacitances
easier to drive
faster switching
Low RDS(on)
Very low insertion inductance (<2nH)
No beryllium oxide (BeO) or other
hazardous materials
Advantages
Optimized for RF and high speed
switching at frequencies to 100MHz
Easy to mount—no insulators needed
High power density
TJM 175 °C
Tstg -55 +175 °C
TL 1.6mm(0.063 in) from case for 10 s
300 °C
Weight
2g





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