PDF DE275-101N30A Data sheet ( Hoja de datos )

Número de pieza	DE275-101N30A
Descripción	RF Power MOSFET
Fabricantes	IXYS Corporation
Logotipo
Hay una vista previa y un enlace de descarga de DE275-101N30A (archivo pdf) en la parte inferior de esta página. Total 5 Páginas
No Preview Available ! DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0 Maximum Ratings 100 V 100 V ±20 V ±30 V 30.0 A 240 A TBD A TBD mJ 5.5 V/ns >200 V/ns VDSS = 100 V ID25 = 30.0 A RDS(on) ≤ 0.06 Ω PDC = 550 W PDC PDHS PDAMB RthJC RthJHS Tc = 25°C Derate 4.4W/°C above 25°C Tc = 25°C 550 W 270 W 3.5 0.25 0.53 W C/W C/W GATE SG1 SG2 DRAIN SD1 SD2 Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified min. typ. max. Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer VDSS VGS = 0 V, ID = 3 ma 100 V − Increased temperature and power cycling capability VGS(th) IGSS IDSS VDS = VGS, ID = 250 µa VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C 2 2.5 4 V • IXYS advanced low Qg process ±100 nA • Low gate charge and capacitances − easier to drive 25 250 µA − faster switching µA • Low RDS(on) RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% 0.06 • Very low insertion inductance (<2nH) Ω • No beryllium oxide (BeO) or other hazardous materials gfs VDS = 15 V, ID = 0.5ID25, pulse test www.DataSheet4U.com TJ TJM 9.7 S Advantages -55 +175 °C • Optimized for RF and high speed 175 °C switching • Easy to mount—no insulators needed Tstg -55 +175 °C • High power density TL 1.6mm(0.063 in) from case for 10 s 300 °C Weight 2g 1 page DE275-101N30A RF Power MOSFET 101N30A DE-SERIES SPICE Model The DE-SERIES SPICE Model is illustrated in Figure 7. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer ca- pacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 7 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the IXYSRF web site at http://www.ixysrf.com/products/switch_mode.html http://www.ixysrf.com/spice/de275-101n30a.html SYM=POWMOSN .SUBCKT 101N09A 10 20 30 TERMINALS: D G S * 100 Volt 30 Amp .05 ohm N-Channel Power MOSFET 10-30-2001 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 1.5 DON 6 2 D1 ROF 5 7 .2 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.5N RD 4 1 .05 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .1N wwwL.DDat1aS0h4eet14UN.com LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=9.0) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=1100P BV=100 M=.5 VJ=.6 TT=1N RS=10M) .MODEL D3 D (IS=.5F CJO=300P BV=100 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0242 Rev 1 © 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.ixyscolorado.com 5 Page

Páginas	Total 5 Páginas
PDF Descargar	[ Datasheet DE275-101N30A.PDF ]

Hoja de datos destacado

Número de pieza	Descripción	Fabricantes
DE275-101N30A	RF Power MOSFET	IXYS Corporation

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.

DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar