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R1LV1616R Schematic ( PDF Datasheet ) - Renesas Technology

Teilenummer R1LV1616R
Beschreibung 16Mb Advanced LPSRAM
Hersteller Renesas Technology
Logo Renesas Technology Logo 




Gesamt 16 Seiten
R1LV1616R Datasheet, Funktion
R1LV1616R Series
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)
REJ03C0101-0400Z
Rev.4.00
2007.09.12
Description
The R1LV1616R Series is a family of low voltage 16-Mbit static RAMs organized as 1048576-words by 16-bit,
fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies.
The R1LV1616R Series is suitable for memory applications where a simple interfacing , battery operating and
battery backup are the important design objectives.
The R1LV1616R Series is packaged in a 52pin micro thin small outline mount device[µTSOP / 10.79mm x
10.49mm with the pin-pitch of 0.4mm], a 48pin thin small outline mount device[TSOP / 12mm x 20mm with the pin-
pitch of 0.5mm] or a 48balls fine pitch ball grid array [f-BGA / 7.5mmx8.5mm with the ball-pitch of 0.75mm and 6x8
array] . It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed
circuit boards.
Features
• Single 2.7-3.6V power supply
• Small stand-by current:2µA (3.0V, typ.)
• Data retention supply voltage =2.0V
• No clocks, No refresh
• All inputs and outputs are TTL compatible
• Easy memory expansion by CS1#, CS2, LB# and UB#
• Common Data I/O
• Three-state outputs: OR-tie capability
• OE# prevents data contention on the I/O bus
• Process technology: 0.15um CMOS
www.DataSheet4U.com
REJ03C0101-0400Z Rev.4.00 2007.09.12
page 1 of 15






R1LV1616R Datasheet, Funktion
R1LV1616R Series
Recommended Operating Conditions
Parameter
Symbol
Supply voltage
Vcc
Vss
Input high voltage
VIH
Input low voltage
VIL
R ver.
Ambient temperature range
I ver.
Ta
Min.
2.7
0
2.4
-0.2
0
-40
Typ.
3.0
0
-
-
-
-
Max.
3.6
0
Vcc+0.2
0.4
+70
+85
Unit
V
V
V
V
ºC
ºC
Note 1. –2.0V in case of AC (Pulse width 30ns)
2. Ambient temperature range depends on R/I-version. Please see table on page 2.
Note
1
2
2
DC Characteristics
Parameter
Symbol Min. Typ.*1 Max. Unit
Test conditions*2
Input leakage current
Output leakage current
|ILI|
|ILo|
Average operating
current
Icc1
Icc2
- - 1 µA Vin=Vss to Vcc
CS1# =VIH or CS2=VIL or
- - 1 µA OE# = VIH or WE# =VIL or
LB# =UB# =VIH,VI/O=Vss to Vcc
Min. cycle, duty =100%
- 25 40 mA I I/O = 0 mA, CS1# =VIL,
CS2=VIH Others = VIH / VIL
Cycle time = 1 µs, I I/O = 0 mA,
- 2 5 mA CS1#0.2V, CS2 VCC-0.2V
VIH VCC-0.2V , VIL 0.2V,
duty=100%
Standby current
ISB - 0.1 0.3 mA CS2=VIL
Standby current
- 2 6 µA ~+25ºC V in 0V
(1) 0VCS20.2V or
ISB1
-
4
12
µA
~+40ºC
(2) CS2Vcc-0.2V,
CS1# Vcc-0.2V or
(3)LB# =UB# Vcc-0.2V,
-
-
25
µA ~+70ºC
CS2Vcc-0.2V,
CS1# 0.2V
- - 40 µA ~+85ºC Average value
Output hige voltage
Output Low voltage
VOH
2.4
-
- V IOH = -1mA
VOL - - 0.4 V IOL = 2mA
www.DNaotateSh1e.etT4yUp.iccoaml parameter indicates the value for the center of distribution at 3.0V (Ta= 25ºC), and not 100% tested.
2. BYTE# pin supported by only TSOP and uTSOP types.
BYTE# Vcc-0.2V or BYTE# 0.2V
REJ03C0101-0400Z Rev.4.00 2007.09.12
page 6 of 15

6 Page









R1LV1616R pdf, datenblatt
R1LV1616R Series
Write Cycle (1) (WE# Clock)
A0~19
(Word Mode)
A-1~19
(Byte Mode)
LB#,UB#
CS1#
CS2
WE#
DQ0~15
(Word Mode)
DQ0~7
(Byte Mode)
tAS
tWC
Valid address
tBW
tCW
tCW
tAW
tWP
tWHZ
tDW
tWR
tOW
tDH
Valid data
www.DataSheet4U.com
REJ03C0101-0400Z Rev.4.00 2007.09.12
page 12 of 15

12 Page





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