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PDF 2SA733T Data sheet ( Hoja de datos )
| Número de pieza | 2SA733T | |
| Descripción | PNP Plastic Encapsulated Transistor | |
| Fabricantes | SeCoS Elektronische Bauelemente | |
| Logotipo |  |
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Elektronische Bauelemente
2SA733T
-60 V, -150 mA
PNP Plastic Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead free
FEATURES
Power dissipation
PACKAGE INFORMATION
Weight: 0.2100g (Approximately)
3
Base
Collector
2
1
Emitter
TO-92
GH
J
AD
1Emitter
2Collector
3Base
B
REF.
Millimeter
K
Min. Max.
A 4.40 4.70
B 4.30 4.70
C 12.70
-
D 3.30 3.81
E CF
E 0.36 0.56
F 0.36 0.51
G 1.27 TYP.
H 1.10
-
J 2.42 2.66
K 0.36 0.76
ABSOLUTE MAXIMUM RATINGS (TA = 25℃ unless otherwise noted)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current -Continuous
Total Power Dissipation
Junction, Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
Ratings
-60
-50
-5
-100
250
+150, -55 ~ +150
Unit
V
V
V
mA
mW
℃
ELECTRICAL CHARACTERISTICS (TA = 25℃ unless otherwise specified)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE
hFE
fT
Cob
NF (noise figures)
Min.
-60
-50
-5
-
-
-
-0.58
90
100
-
-
Typ.
-
-
-
-
-
-0.18
-0.62
200
-
-
-
Max.
-
-
-
-100
-100
-0.30
-0.68
600
-
6
20
Unit
V
V
V
nA
nA
V
V
MHz
pF
dB
Test Conditions
IC=-50uA, IE = 0
IC=-1mA, IB = 0
IE=-50uA, IC = 0
VCB=-60V, IE = 0
VEB=-5V, IC = 0
IC=-100mA, IB=-10mA
VCE = -6V, IC = -1.0mA
VCE=-6V, IC=-1mA
VCE=-6V, IC=-10mA
VCB = -10V, IE = 0, f = 1 MHz
VCE=-6V, IC=-0.3mA, Rg=10kΩ, f=100HZ
wCwLwA.DSaStaISFheICet4AUT.cIoOmN OF hFE
Rank
R
Range
90 - 180
Q
135 - 270
P
200 - 400
K
300 - 600
01-June-2005 Rev. B
Page 1 of 2
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| PDF Descargar | [ Datasheet 2SA733T.PDF ] | |
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