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PDF CMPDM7003 Data sheet ( Hoja de datos )
| Número de pieza | CMPDM7003 | |
| Descripción | SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET | |
| Fabricantes | Central Semiconductor | |
| Logotipo |  |
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CMPDM7003
SURFACE MOUNT
N-CHANNEL
ENHANCEMENT-MODE
SILICON MOSFET
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM7003 is
an Enhancement-mode N-Channel Field Effect
Transistor, manufactured by the N-Channel DMOS
Process, designed for high speed pulsed amplifier and
driver applications. This MOSFET offers low rDS(ON)
and ESD protection up to 2kV.
MARKING CODE: C7003
SOT-23 CASE
APPLICATIONS:
• Load/Power switches
• Power supply converter circuits
• Battery powered portable equipment
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Maximum Pulsed Drain Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
FEATURES:
• ESD protection up to 2kV
• Low rDS(ON)
• Low VDS(ON)
• Low threshold voltage
• Fast switching
• Logic level compatibility
SYMBOL
VDS
VDG
VGS
ID
IDM
PD
TJ, Tstg
ΘJA
50
50
12
280
1.5
350
-65 to +150
357
UNITS
V
V
V
mA
A
mW
°C
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN TYP
IGSSF, IGSSR
IGSSF, IGSSR
IGSSF, IGSSR
IDSS
BVDSS
VGS(th)
VSD
rDS(ON)
rDS(ON)
rDS(ON)
gFS
Crss
Ciss
Coss
VGS=5.0V
VGS=10V
VGS=12V
VDS=50V, VGS=0
VGS=0, ID=10μA
VDS=VGS, ID=250μA
VGS=0, IS=115mA
VGS=1.8V, ID=50mA
VGS=2.5V, ID=50mA
VGS=5.0V, ID=50mA
VDS=10V, ID=200mA
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
VDS=25V, VGS=0, f=1.0MHz
50
0.49
200
1.6
1.3
1.1
MAX
100
2.0
2.0
50
1.0
1.4
3.0
2.5
2.0
5.0
50
25
UNITS
nA
μA
μA
nA
V
V
V
Ω
Ω
Ω
mS
pF
pF
pF
R1 (27-January 2010)
www.DataSheet4U.com
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet CMPDM7003.PDF ] | |
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