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PDF WTC2312 Data sheet ( Hoja de datos )

Número de pieza WTC2312
Descripción N-Channel Enhancement Mode Power MOSFET
Fabricantes Weitron Technology 
Logotipo Weitron Technology Logotipo



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WTC2312
N-Channel Enhancement
Mode Power MOSFET
P b Lead(Pb)-Free
Features:
1 GATE
* Super High Dense Cell Design For Low RDS(ON)
RDS(ON)<41mΩ @VGS=4.5V
RDS(ON)<47mΩ @VGS=2.5V
RDS(ON)<57mΩ @VGS=1.8V
* Capable of 2.5V gate drive
* Rugged and Reliable
* Lower On-Resistance
Application:
* Power Management in Notebook Computer.
* Portable Equipment.
* Battery Powered System.
3 DRAIN
2 SOURCE
DRAIN CURRENT
4.9 AMPERES
DRAIN SOUCE VOLTAGE
20 VOLTAGE
1
2
3
SOT-23
Maximum Ratings(TA=25℃ Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current3 ,VGS@4.5V(TA=25°C)
,VGS@4.5V(TA=70°C)
Pulsed Drain Current 1, 2
VGS
ID
IDM
Total Power Dissipation(TA=25°C)
Maximum Junction-ambient 3
PD
RθJA
Operating Junction Temperature Range
Storage Temperature Range
TJ
Tstg
Value
20
±8
4.9
3.4
15
0.75
140
+150
-55~+150
Unit
V
A
W
°C /W
°C
°C
Device Marking
WTC2312=N12
WEITRON
http://www.weitron.com.tw
1/6
Rev.B 04-Aug-09

1 page




WTC2312 pdf
WTC2312
12
I D =4A
10
8
6
V DS =10V
V DS =12V
V DS =16V
4
2
0
02 4 6
8 10
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10 100us
1ms
1
10ms
100ms
0.1
T A =25 o C
Single Pulse
0.01
1s
DC
0.1 1
10
V DS , Drain-to-Source Voltage (V)
100
Fig 9. Maximum Safe Operating Area
1000
100
f=1.0MHz
C iss
C oss
C rss
10
1
5
9 13 17 21 25
V DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.2
0.1 0.1
0.05
0.01
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 270ºC/W
0.001
0.0001 0.001
0.01 0.1
1 10
t , Pulse Width (s)
100 1000
Fig 10. Effective Transient Thermal Impedance
VDS
90%
10%
VGS
td(on) tr
td(off) tf
VG
4.5V
QGS
QG
QGD
Charge
Q
Fig 11. Switching Time Circuit
Fig 12. Gate Charge Circuit
WEITRON
http://www.weitron.com.tw
5/6
Rev.B 04-Aug-09

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