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CBTL03SB212 Schematic ( PDF Datasheet ) - NXP Semiconductors

Teilenummer CBTL03SB212
Beschreibung DisplayPort Gen2 sideband signal multiplexer
Hersteller NXP Semiconductors
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CBTL03SB212 Datasheet, Funktion
CBTL03SB212
DisplayPort Gen2 sideband signal multiplexer
Rev. 1 — 21 February 2011
Product data sheet
1. General description
The CBTL03SB212 is a sideband signal multiplexer for DisplayPort Gen2 applications. It
provides one differential channel capable of switching or multiplexing (bidirectional and
AC-coupled) DisplayPort 1.2 Fast AUX or AUX signal, using high-bandwidth pass-gate
technology. Additionally, it provides for switching/multiplexing of the Hot Plug Detect signal
as well as the Display Data Channel (DDC) signals, for a total of three channels.
A typical application of CBTL03SB212 is on motherboards where one of two GPU display
sources needs to be selected to connect to a display sink device or connector. A controller
chip selects which path to use by setting a select signal HIGH or LOW. Due to the
non-directional nature of the signal paths (which use high-bandwidth pass-gate
technology), the CBTL03SB212 can also be used in the reverse topology, e.g., to connect
one display source device to one of two display sink devices or connectors.
GPU1
CBTL03SB212
AUX1+
AUX1
AUX2+
2:1
MUX
AUX2
+3.3 V
2 kΩ
DDC_CLK1
DDC_DAT1
DDC_CLK2
2:1
MUX
DDC_DAT2
HPD_1
HPD_2
2:1
MUX
GND
100 kΩ
AUX+
AUX
100 kΩ
+3.3 V
DDC_CLK
DDC_DAT
HPD
GPU2
SEL, XSD_N
Fig 1. CBTL03SB212 application example
002aag007
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CBTL03SB212 Datasheet, Funktion
NXP Semiconductors
CBTL03SB212
DisplayPort Gen2 sideband signal multiplexer
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VDD
Tcase
supply voltage
case temperature
for operation within
specification
0.3
40
VESD
electrostatic discharge HBM
voltage
CDM
[1] -
[2] -
Max
+5
+85
4000
1000
Unit
V
°C
V
V
[1] Human Body Model: ANSI/EOS/ESD-S5.1-1994, standard for ESD sensitivity testing, Human Body Model -
Component level; Electrostatic Discharge Association, Rome, NY, USA.
[2] Charged-Device Model: ANSI/EOS/ESD-S5.3-1-1999, standard for ESD sensitivity testing,
Charged-Device Model - Component level; Electrostatic Discharge Association, Rome, NY, USA.
9. Recommended operating conditions
Table 6.
Symbol
VDD
VI
Tamb
Recommended operating conditions
Parameter
Conditions
supply voltage
input voltage
ambient temperature operating in free air
Min Typ Max Unit
3.0 3.3 3.6 V
- - 3.6 V
40 -
+85 °C
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CBTL03SB212
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 February 2011
© NXP B.V. 2011. All rights reserved.
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CBTL03SB212 pdf, datenblatt
NXP Semiconductors
CBTL03SB212
DisplayPort Gen2 sideband signal multiplexer
temperature
maximum peak temperature
= MSL limit, damage level
minimum peak temperature
= minimum soldering temperature
peak
temperature
time
001aac844
MSL: Moisture Sensitivity Level
Fig 5. Temperature profiles for large and small components
For further information on temperature profiles, refer to Application Note AN10365
“Surface mount reflow soldering description”.
14. Abbreviations
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Table 14. Abbreviations
Acronym
Description
AUX
Auxiliary channel in DisplayPort definition
CDM
Charged-Device Model
CMOS
Complementary Metal-Oxide Semiconductor
DDC
Display Data Channel
DUT
Device Under Test
ESD
ElectroStatic Discharge
FAUX
Fast AUX
GPU
Graphics Processor Unit
HBM
Human Body Model
HPD
Hot Plug Detect
I/O Input/Output
MUX
Multiplexer
PCB
Printed-Circuit Board
SMA
SubMiniature, version A (connector)
TDR
Time-Domain Reflectometry
CBTL03SB212
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 February 2011
© NXP B.V. 2011. All rights reserved.
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