Datenblatt-pdf.com


CEU630N Schematic ( PDF Datasheet ) - Chino-Excel Technology

Teilenummer CEU630N
Beschreibung N-Channel Enhancement Mode Field Effect Transistor
Hersteller Chino-Excel Technology
Logo Chino-Excel Technology Logo 




Gesamt 4 Seiten
CEU630N Datasheet, Funktion
CED630N/CEU630N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
200V, 7.5A, RDS(ON) = 0.36@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
200
±20
7.5
30
54
0.43
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
www.DataSheet4U.com
Symbol
RθJC
RθJA
Limit
2.3
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2009.March
http://www.cetsemi.com





SeitenGesamt 4 Seiten
PDF Download[ CEU630N Schematic.PDF ]

Link teilen




Besondere Datenblatt

TeilenummerBeschreibungHersteller
CEU630NN-Channel Enhancement Mode Field Effect TransistorChino-Excel Technology
Chino-Excel Technology

TeilenummerBeschreibungHersteller
CD40175BC

Hex D-Type Flip-Flop / Quad D-Type Flip-Flop.

Fairchild Semiconductor
Fairchild Semiconductor
KTD1146

EPITAXIAL PLANAR NPN TRANSISTOR.

KEC
KEC


www.Datenblatt-PDF.com       |      2020       |      Kontakt     |      Suche