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Teilenummer | CEU16N10L |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | Chino-Excel Technology | |
Logo | ||
Gesamt 4 Seiten CED16N10L/CEU16N10L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
100V, 13.3A, RDS(ON) = 115mΩ @VGS = 10V.
RDS(ON) = 125mΩ @VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-251 & TO-252 package.
D
G
S
CEU SERIES
TO-252(D-PAK)
G
DS
CED SERIES
TO-251(I-PAK)
G
D
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
100
±20
13.3
53
43
0.34
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
www.DataSheet4U.com
Symbol
RθJC
RθJA
Limit
3.5
50
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2010.Jan.
http://www.cetsemi.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CEU16N10L Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
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