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Teilenummer | CES2324 |
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Beschreibung | N-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | Chino-Excel Technology | |
Logo | ||
Gesamt 4 Seiten CES2324
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
20V, 4.2A, RDS(ON) = 45mΩ @VGS = 4.5V.
RDS(ON) = 80mΩ @VGS = 2.5V.
High dense cell design for extremely low RDS(ON).
Lead free product is acquired.
Rugged and reliable.
SOT-23 package.
D
DS
G
SOT-23
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS ±12
Drain Current-Continuous
Drain Current-Pulsed a
ID 4.2
IDM 16
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
100
www.DataSheet4U.com
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
7 - 26
Rev 1. 2006.May
http://www.cetsemi.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CES2324 Schematic.PDF ] |
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