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Teilenummer | CES2313A |
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Beschreibung | P-Channel Enhancement Mode Field Effect Transistor | |
Hersteller | Chino-Excel Technology | |
Logo | ||
Gesamt 4 Seiten CES2313A
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
-30V, -3.8A, RDS(ON) = 55mΩ @VGS = -10V.
RDS(ON) = 86mΩ @VGS = -4.5V.
High dense cell design for extremely low RDS(ON).
Rugged and reliable.
Lead free product is acquired.
SOT-23 package.
D
DS
G
SOT-23
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS -30
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID -3.8
IDM -15.2
Maximum Power Dissipation
PD 1.25
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient b
Symbol
RθJA
Limit
100
www.DataSheet4U.com
Units
V
V
A
A
W
C
Units
C/W
Details are subject to change without notice .
1
Rev 2. 2010.Aug
http://www.cetsemi.com
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ CES2313A Schematic.PDF ] |
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