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What is RB521CS30L?

This electronic component, produced by the manufacturer "NXP Semiconductors", performs the same function as "100 mA low VF MEGA Schottky barrier rectifier".


RB521CS30L Datasheet PDF - NXP Semiconductors

Part Number RB521CS30L
Description 100 mA low VF MEGA Schottky barrier rectifier
Manufacturers NXP Semiconductors 
Logo NXP Semiconductors Logo 


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RB521CS30L
100 mA low VF MEGA Schottky barrier rectifier
Rev. 1 — 24 January 2011
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD882 leadless ultra small
Surface-Mounted Device (SMD) plastic package.
1.2 Features and benefits
„ Average forward current: IF(AV) 100 mA
„ Reverse voltage: VR 30 V
„ Low forward voltage: VF 350 mV
„ Low reverse current: IR 10 μA
„ AEC-Q101 qualified
„ Leadless ultra small SMD plastic package
1.3 Applications
„ Low voltage rectification
„ High efficiency DC-to-DC conversion
„ Switch Mode Power Supply (SMPS)
„ Reverse polarity protection
„ Low power consumption applications
1.4 Quick reference data
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Table 1.
Symbol
IF(AV)
Quick reference data
Parameter
average forward current
IR reverse current
VR reverse voltage
VF forward voltage
Conditions
square wave;
δ = 0.5; f = 20 kHz
Tamb 135 °C
Tsp 145 °C
VR = 10 V
IF = 10 mA
Min Typ Max Unit
[1] - - 100 mA
- - 100 mA
- 2 10 μA
- - 30 V
[2] - 280 350 mV
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
cathode 1 cm2.
[2] Pulse test: tp 300 μs; δ ≤ 0.02.

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RB521CS30L equivalent
NXP Semiconductors
RB521CS30L
100 mA low VF MEGA Schottky barrier rectifier
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VF forward voltage
[1]
IF = 0.1 mA
- 145 - mV
IF = 1 mA
- 210 - mV
IF = 10 mA
- 280 350 mV
IF = 100 mA
- 405 - mV
IR
reverse current
VR = 10 V
- 2 10 μA
Cd
diode capacitance
VR = 1 V; f = 1 MHz
-
8-
pF
[1] Pulse test: tp 300 μs; δ ≤ 0.02.
1
IF
(A)
101
(1)
(2)
102
(3) (4) (5)
006aac502
103
104
0.0 0.2 0.4 0.6 0.8
VF (V)
(1) Tj = 150 °C
(2) Tj = 125 °C
(3) Tj = 85 °C
(4) Tj = 25 °C
(5) Tj = 40 °C
Fig 3. Forward current as a function of forward
voltage; typical values
102
IR
(A)
103
104
105
106
107
108
109
0
(1)
(2)
(3)
(4)
10
(1) Tj = 125 °C
(2) Tj = 85 °C
(3) Tj = 25 °C
(4) Tj = 40 °C
006aac503
20 30
VR (V)
Fig 4. Reverse current as a function of reverse
voltage; typical values
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RB521CS30L
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 24 January 2011
© NXP B.V. 2011. All rights reserved.
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RB521CS30LThe function is 100 mA low VF MEGA Schottky barrier rectifier. NXP SemiconductorsNXP Semiconductors

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