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Número de pieza | AWT6301 | |
Descripción | LINEAR POWER AMPLIFIER MODULE | |
Fabricantes | ANADIGICS | |
Logotipo | ||
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No Preview Available ! FEATURES
InGaP HBT Technology
High Efficiency: 53 % AMPS, 39 % CDMA
Low Quiescent Current: 50 mA
Low Leakage Current in Shutdown Mode: <1 mA
VREF = +2.85 V (+2.7 V Min Over Temp.)
Optimized for a 50 W System
Low Profile Surface Mount Package: 1.1mm
CDMA 1XRTT, 1xEV-DO Compliant
Pinout Enables Easy Phone Board Migration
From 4mm x 4mm Package
AWT6301
Cellular Dual Mode AMPS/CDMA
3.4 V/28 dBm Linear PowerAmplifier Module
ADVANCED PRODUCT INFORMATION - Rev 0.1
APPLICATIONS
Single Mode CDMA Wireless Handsets
Dual Mode AMPS/CDMA Wireless Handsets
M9 Package
8 Pin 3mm x 3mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWT6301 meets the increasing demands for
higher efficiency and linearity in AMPS/CDMA 1X
handsets, while reducing pcb area by 44%. The
package pinout was chosen to enable handset
manufacturers to switch from a 4mm x 4mm PA
module with very few layout changes to the phone
board. The device is manufactured on an advanced
InGaP HBT MMIC technology offering state-of-the-
art reliability, temperature stability, and ruggedness.
Selectable bias modes that optimize efficiency for
different output power levels, and a shutdown mode
with low leakage current, serve to increase handset
talk and standby time. The self contained 3mm x
3mm surface mount package incorporates matching
networks optimized for output power, efficiency and
linearity in a 50 W system.
GND at slug (pad)
VREF 1
8 GND
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VMODE 2
Bias Control
7 RFOUT
RFIN 3
6 GND
VCC1 4
V5 CC2
Figure 1: Block Diagram
10/2003
1 page AWT6301
PAR AME T E R
Table 5: Electrical Specifications - CDMA Operation
(TC = +25 °C, VCC = +3.4 V, VREF = +2.85 V, 50 W system)
MIN TYP MAX UNIT
C OMME N T S
Gain
26
24.5
24
23
28
28
26
26
30
31
28
29
POUT = +28 dBm, VMODE = 0 V
dB
Over Temperature
POUT = +16 dBm, VMODE = +2.85 V
Over Temperature
Adjacent Channel Power
at 6885 kHz offset (1)
Primary Channel BW = 1.23 MHZ
-
-50 -47
POUT = +28 dBm, VMODE = 0 V
Adjacent Channel BW = 30 kHz
-
-
- -44
-50 -46
dBc
Over Temperature
POUT = +16 dBm, VMODE = +2.85 V
- - -44
Over Temperature
Adjacent Channel Power
at 61.98 MHz offset (1)
Primary Channel BW = 1.23 MHZ
Adjacent Channel BW = 30 kHz
-
-
Power-Added Efficiency (1)
Quiescent Current (Icq)
Reference Current
Mode Control Current
Leakage Current
Noise in Receive Band
Harmonics
2fo
3fo, 4fo
Input Impedance
37
8
-
-
-
-
-
-
-
-
Spurious Output Level
(all spurious outputs)
www.DataSheet4U.com
-
Load mismatch stress with no
permanent degradation or failure
8:1
Notes:
(1) PAE and ACP limit applies at 836.5 MHz.
-60 -57
-68 -57
dBc
POUT = +28 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.85 V
Over Temperature
39 -
8.5 -
%
POUT = +28 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.85 V
50 60
mA VMODE = 0 V, Low Bias
58
mA through VREF pin
0.35 1.0
mA through VMODE pin
<1 5
mA VCC = +4.2 V, VREF = 0 V,
VMODE = 0 V
-135 -133 dBm/Hz 869 MHz to 894 MHz
-35 -30
-50 -30
dBc
- 2:1 VSWR
POUT < +28 dBm
-
-65
dBc
Load VSWR < 8:1
Applies over all voltage and
temperature operating ranges
VCC = +5.0 V
-
-
VSWR
PIN = +5 dBm
Applies over full operating
temperature ranges
ADVANCED PRODUCT INFORMATION - Rev 0.1
10/2003
5
5 Page |
Páginas | Total 10 Páginas | |
PDF Descargar | [ Datasheet AWT6301.PDF ] |
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