|
|
PDF DMP2004VK Data sheet ( Hoja de datos )
| Número de pieza | DMP2004VK | |
| Descripción | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |
| Fabricantes | Diodes | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de DMP2004VK (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
DMP2004VK
DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Dual P-Channel MOSFET
• Low On-Resistance
• Very Low Gate Threshold Voltage VGS(TH) <1V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Gate
• "Green" Device (Note 3)
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.006 grams (approximate)
SOT-563
D2 G1
S1
ESD protected
TOP VIEW
BOTTOM VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1) VGS = -4.5V
Pulsed Drain Current
Symbol
VDSS
VGSS
ID
IDM
S2 G2 D1
TOP VIEW
Internal Schematic
Value
-20
±8
-530
-1.8
Units
V
V
mA
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient, Note 1
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
400
312.5
-65 to +150
Units
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
www.DDaiotdaeShFeoerwt4aUrd.cVoomltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BVDSS
IDSS
IGSS
-20
⎯
⎯
⎯ ⎯ V VGS = 0V, ID = -250mA
⎯ -1.0 μA VDS = -20V, VGS = 0V
⎯ ±1.0 μA VGS = ±4.5V, VDS = 0V
VGS(th)
-0.5
⎯
-1.0
V VDS = VGS, ID = -250μA
0.7 0.9
VGS = -4.5V, ID = -430mA
RDS (ON)
⎯
1.1 1.4
1.7 2.0
Ω VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
|Yfs| 200
⎯
⎯ mS VDS = -10V, ID = -0.2A
VSD -0.5 ⎯ -1.2 V VGS = 0V, IS = 115mA
Ciss
Coss
Crss
⎯
⎯
⎯
⎯ 175 pF
⎯
30
pF
VDS = -16V, VGS = 0V
f = 1.0MHz
⎯ 20 pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMP2004VK
Document number: DS30916 Rev. 4 - 2
1 of 5
www.diodes.com
June 2010
© Diodes Incorporated
1 page  
DMP2004VK
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
www.DataSheet4U.com
DMP2004VK
Document number: DS30916 Rev. 4 - 2
5 of 5
www.diodes.com
June 2010
© Diodes Incorporated
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DMP2004VK.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DMP2004VK | DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | Diodes |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |