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Teilenummer | DCX55 |
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Beschreibung | NPN SURFACE MOUNT TRANSISTOR | |
Hersteller | Diodes | |
Logo | ||
Gesamt 4 Seiten DCX55/-16
NPN SURFACE MOUNT TRANSISTOR
Features
• Epitaxial Planar Die Construction
• Complementary PNP Type Available (DCX52)
• Ideally Suited for Automated Assembly Processes
• Ideal for Medium Power Switching or Amplification Applications
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT89-3L
• Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
• Marking & Type Code Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
SOT89-3L
COLLECTOR
3 E 2,4
C4 2C
1B
1
BASE
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Symbol
VCBO
VCEO
VEBO
ICM
IC
Value
60
60
5
1.5
1
Unit
V
V
V
A
A
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
Tj, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max Unit
Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
60
⎯
⎯ V IC = 100μA, IE = 0A
Collector-Emitter Breakdown Voltage
V(BR)CEO
60
⎯
⎯ V IC = 10mA, IB = 0A
Emitter-Base Breakdown Voltage
V(BR)EBO
5
⎯ ⎯ V IE = 10μA, IC = 0A
Collector Cut-off Current
ICBO
⎯
⎯
⎯ 100 nA VCB = 30V, IE = 0
⎯ 20 μA VCB = 30V, IE = 0, TA = 150°C
Emitter Cut-off Current
ON CHARACTERISTICS (Note 4)
IEBO
⎯
⎯ 100 nA VEB = 5V, IC = 0A
Collector-Emitter Saturation Voltage
VCE(SAT)
⎯
⎯ 0.5 V IC = 500mA, IB = 50mA
Base-Emitter Turn-On Voltage
VBE(ON)
⎯
⎯ 1.0 V IC = 500mA, VCE = 2V
www.DDaCtaCSuhrreeentt4GUa.cinom
DCX55, DCX55-16
DCX55
hFE
63
40
63
⎯ ⎯ ⎯ IC = 5mA, VCE = 2V
⎯ ⎯ ⎯ IC = 500mA, VCE = 2V
⎯ 250 ⎯ IC = 150mA, VCE = 2V
SMALL SIGNAL CHARACTERISTICS
DCX55-16
100 ⎯ 250 ⎯ IC = 150mA, VCE = 2V
Transition Frequency
fT
⎯
200
⎯
MHz
IC = 50mA, VCE = 5V,
f = 100MHz
Output Capacitance
Cobo
⎯
⎯
15 pF VCB = 10V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
DS31154 Rev. 3 - 2
1 of 4
www.diodes.com
DCX55/-16
© Diodes Incorporated
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Seiten | Gesamt 4 Seiten | |
PDF Download | [ DCX55 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
DCX51 | PNP SURFACE MOUNT TRANSISTOR | Diodes |
DCX51-16 | PNP SURFACE MOUNT TRANSISTOR | Diodes |
DCX52 | PNP SURFACE MOUNT TRANSISTOR | Diodes |
DCX52-16 | PNP SURFACE MOUNT TRANSISTOR | Diodes |
DCX53 | PNP SURFACE MOUNT TRANSISTOR | Diodes |
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