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DCX55 Schematic ( PDF Datasheet ) - Diodes

Teilenummer DCX55
Beschreibung NPN SURFACE MOUNT TRANSISTOR
Hersteller Diodes
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Gesamt 4 Seiten
DCX55 Datasheet, Funktion
DCX55/-16
NPN SURFACE MOUNT TRANSISTOR
Features
Epitaxial Planar Die Construction
Complementary PNP Type Available (DCX52)
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
Mechanical Data
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Marking & Type Code Information: See Page 3
Ordering Information: See Page 3
Weight: 0.072 grams (approximate)
SOT89-3L
COLLECTOR
3 E 2,4
C4 2C
1B
1
BASE
3
TOP VIEW
EMITTER
Schematic and Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Thermal Characteristics
Symbol
VCBO
VCEO
VEBO
ICM
IC
Value
60
60
5
1.5
1
Unit
V
V
V
A
A
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Symbol
PD
RθJA
Tj, TSTG
Value
1
125
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol Min Typ Max Unit
Test Conditions
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
V(BR)CBO
60
V IC = 100μA, IE = 0A
Collector-Emitter Breakdown Voltage
V(BR)CEO
60
V IC = 10mA, IB = 0A
Emitter-Base Breakdown Voltage
V(BR)EBO
5
⎯ ⎯ V IE = 10μA, IC = 0A
Collector Cut-off Current
ICBO
100 nA VCB = 30V, IE = 0
20 μA VCB = 30V, IE = 0, TA = 150°C
Emitter Cut-off Current
ON CHARACTERISTICS (Note 4)
IEBO
100 nA VEB = 5V, IC = 0A
Collector-Emitter Saturation Voltage
VCE(SAT)
0.5 V IC = 500mA, IB = 50mA
Base-Emitter Turn-On Voltage
VBE(ON)
1.0 V IC = 500mA, VCE = 2V
www.DDaCtaCSuhrreeentt4GUa.cinom
DCX55, DCX55-16
DCX55
hFE
63
40
63
⎯ ⎯ ⎯ IC = 5mA, VCE = 2V
⎯ ⎯ ⎯ IC = 500mA, VCE = 2V
250 IC = 150mA, VCE = 2V
SMALL SIGNAL CHARACTERISTICS
DCX55-16
100 250 IC = 150mA, VCE = 2V
Transition Frequency
fT
200
MHz
IC = 50mA, VCE = 5V,
f = 100MHz
Output Capacitance
Cobo
15 pF VCB = 10V, f = 1MHz
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can
be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle 2%.
DS31154 Rev. 3 - 2
1 of 4
www.diodes.com
DCX55/-16
© Diodes Incorporated





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