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DB24307 Schematic ( PDF Datasheet ) - Panasonic Semiconductor

Teilenummer DB24307
Beschreibung Silicon epitaxial planar type
Hersteller Panasonic Semiconductor
Logo Panasonic Semiconductor Logo 




Gesamt 4 Seiten
DB24307 Datasheet, Funktion
This product complies with the RoHS Directive (EU 2002/95/EC).
DB24307
Silicon epitaxial planar type
For rectication
Features
Low forward voltage VF
High forward current (Average) rating : IF(AV) = 3 A
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Reverse voltage
VR 30
Maximum peak reverse voltage
VRM
30
Forward current (Average)
IF(AV)
3.0
Non-repetitive peak forward surge current * IFSM 50
Junction temperature
Tj 125
Storage temperature
Tstg –55 to +125
Note) *: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Unit
V
V
A
A
°C
°C
Package
Code
TMiniP2-F2-B
Pin Name
1: Cathode
2: Anode
Marking Symbol: A5
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max Unit
Forward voltage
VF IF = 3.0 A
0.37 V
Reverse current
IR VR = 30 V
2.0 mA
Terminal capacitance
Ct VR = 10 V, f = 1 MHz
111 pF
Reverse recovery time *
trr
IF = IR = 100 mA, Irr = 10 mA,
RL = 100
35 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
www.DataSheet4U.com
A
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100
Publication date: October 2010
Ver. AED
1





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