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PDF DA27101 Data sheet ( Hoja de datos )
| Número de pieza | DA27101 | |
| Descripción | Silicon epitaxial planar type | |
| Fabricantes | Panasonic Semiconductor | |
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This product complies with the RoHS Directive (EU 2002/95/EC).
DA27101
Silicon epitaxial planar type
For high speed switching circuits
DA2J101 in SSSMini2 type package
Features
Small reverse current IR
Short reverse recovery time trr
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
Package
Code
SSSMini2-F4-B
Pin Name
1: Cathode
2: Anode
Marking Symbol: A1
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Non-repetitive peak forward surge current *
Junction temperature
Storage temperature
VR
VRM
IF
IFM
IFSM
Tj
Tstg
Note) *: 1 t = 1 s
Rating
80
80
100
225
500
150
–55 to +150
Unit
V
V
mA
mA
mA
°C
°C
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min Typ Max
Forward voltage
VF IF = 100 mA
0.92
Reverse voltage
VR IR = 100 mA
80
Reverse current
IR VR = 80 V
Terminal capacitance
Ct VR = 0 V, f = 1 MHz
Reverse recovery time *
trr IF = 10 mA, VR = 6 V, Irr = 0.25 × IR
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz
3. *: trr measurement circuit
1.20
100
1.2
3
Bias Application Unit (N-50BU)
www.DataSheet4U.com
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Input Pulse
tr tp
10%
t
VR 90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
IF
trr
t
Irr = 0.25 × IR
IF = 10 mA
VR = 6 V
Unit
V
V
nA
pF
ns
Publication date: November 2010
Ver. DED
1
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| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DA27101.PDF ] | |
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