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Teilenummer | EIA1415A-2P |
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Beschreibung | 14.0-15.35GHz 2W Internally Matched Power FET | |
Hersteller | Excelics Semiconductor | |
Logo | ||
Gesamt 1 Seiten Excelics
EIA1415A-2P
Not recommended for new designs. Contact factory. Effective 03/2003
14.0-15.35GHz, 2W Internally Matched Power FET
• 14.0-15.35GHz BANDWIDTH AND INPUT/OUTPUT
IMPEDANCE MATCHED TO 50 OHM
• HIGH PAE( 25% TYPICAL)
• +33.0 TYPICAL P1dB OUTPUT POWER
• 7.5dB TYPICAL G1dB POWER GAIN
• NON-HERMETIC METAL FLANGE PACKAGE
ELECTRICAL CHARACTERISTICS (Ta = 25 OC)
SYMBOLS
PARAMETERS/TEST CONDITIONS
P1dB
G1dB
PAE
Output Power at 1dB Compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Gain at 1dB Compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Power Added Efficiency at 1dB compression
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Id1dB
IP3
Drain Current at 1dB Compression
Output 3rd Order Intercept Point
f=14.0-15.35GHz Vds=8V, Idsq=0.5 Idss
Idss Saturated Drain Current Vds=3V, Vgs=0V
Gm Transconductance Vds=3V, Vgs=0V
Vp Pinch-off Voltage Vds=3V, Ids=12mA
BVgd Drain Breakdown Voltage Igd=4.8mA
Rth Thermal Resistance (Au-Sn Eutectic Attach)
EIA1415-2P
MIN TYP MAX
32.0 33.0
6.5 7.5
25
900
40
1100 1440 1700
1500
-1.0 -2.5
-13 -15
8
UNIT
dBm
dB
%
mA
dBm
mA
mS
V
V
oC/W
MAXIMUM RATINGS AT 25OC
SYMBOLS
PARAMETERS
ABSOLUTE1
Vds Drain-Source Voltage
12V
Vgs Gate-Source Voltage
-8V
Ids Drain Current
Idss
Igsf Forward Gate Current
180mA
Pin Input Power
32dBm
Tch Channel Temperature
175oC
www.DataSheet4U.comTstg
Pt
Storage Temperature
Total Power Dissipation
-65/175oC
17W
Note: 1. Exceeding any of the above ratings may result in permanent damage.
2. Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
8V
-3V
Idss
30mA
@ 3dB Compression
150oC
-65/150oC
14.2W
Excelics Semiconductor, Inc., 310 De Guine Drive, Sunnyvale, CA 94085
Phone: (408) 737-1711 Fax: (408) 737-1868 Web Site: www.excelics.com
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Seiten | Gesamt 1 Seiten | |
PDF Download | [ EIA1415A-2P Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
EIA1415A-2P | 14.0-15.35GHz 2W Internally Matched Power FET | Excelics Semiconductor |
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