|
|
Número de pieza | EIA1415-5 | |
Descripción | 14.40-15.35GHz 5-Watt Internally Matched Power FET | |
Fabricantes | Excelics Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de EIA1415-5 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
No Preview Available ! UPDATED 11/17/2006
EIA1415-5
14.40-15.35GHz 5-Watt Internally Matched Power FET
FEATURES
• 14.40– 15.35GHz Bandwidth
• Input/Output Impedance Matched to 50 Ohms
• +36.5 dBm Output Power at 1dB Compression
• 7.0 dB Power Gain at 1dB Compression
• 33% Power Added Efficiency
• Hermetic Metal Flange Package
• 100% Tested for DC, RF, and RTH
.060 MIN.
.650±.008 .512
GATE
Excelics
EIA1415-5
YYWW
.060 MIN.
DRAIN
.022
.319
SN
.094
.382
.045
.004 .070 ±.008
.129
ALL DIMENSIONS IN INCHES
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Caution! ESD sensitive device.
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
∆G
PAE
Output Power at 1dB Compression f =14.40-5.35GHz
VDS = 8 V, IDSQ ≈ 1400mA
Gain at 1dB Compression
f =14.40-15.35GHz
VDS = 8 V, IDSQ ≈ 1400mA
Gain Flatness
f =14.40-15.35GHz
VDS = 8 V, IDSQ ≈ 1400mA
Power Added Efficiency at 1dB Compression
VDS = 8 V, IDSQ ≈ 1400mA
f =14.40-15.35GHz
Id1dB Drain Current at 1dB Compression f =14.40-15.35GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
VDS = 3 V, IDS = 29 mA
Note: 1) Tested with 100 Ohm gate resistor.
2) Overall Rth depends on case mounting.
MIN
35.5
6.0
TYP
36.5
7.0
33
1700
2880
-1.0
5.5
MAX
±0.6
2000
3600
-2.5
6.0
UNITS
dBm
dB
dB
%
mA
mA
V
oC/W
ABSOLUTE MAXIMUM RATING1,2
SYMBOLS
PARAMETERS
ABSOLUTE1
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Igf Forward Gate Current
10
-5
43.2mA
Igr Reverse Gate Current
-7.2mA
Pin Input Power
35.5dBm
Tch Channel Temperature
175 oC
www.DataSheeTts4Utg.com
Pt
Storage Temperature
Total Power Dissipation
-65 to +175 oC
25W
Note: 1) Exceeding any of the above ratings may result in permanent damage.
2) Exceeding any of the above ratings may reduce MTTF below design goals.
CONTINUOUS2
8V
-3V
14.4mA
-2.4mA
@ 3dB Compression
175 oC
-65 to +175 oC
25W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 2
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
Revised November 2006
1 page |
Páginas | Total 2 Páginas | |
PDF Descargar | [ Datasheet EIA1415-5.PDF ] |
Número de pieza | Descripción | Fabricantes |
EIA1415-5 | 14.40-15.35GHz 5-Watt Internally Matched Power FET | Excelics Semiconductor |
EIA1415-8P | 14.4-15.35GHz 8W Internally Matched Power FET | Excelics Semiconductor |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |