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PDF GT5G133 Data sheet ( Hoja de datos )
| Número de pieza | GT5G133 | |
| Descripción | Strobe Flash Applications | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de GT5G133 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT5G133
GT5G133
Strobe Flash Applications
• Enhancement-mode
• Low gate drive voltage: VGE = 2.5 V (min) (@IC = 130 A)
• Peak collector current:
IC = 130 A (max)
• Compact and Thin (TSON-8) package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
Gate-emitter voltage
DC
Pulse
Collector current
Pulse (Note 1)
Collector power
dissipation(t = 10 s)
(Note 2a)
(Note 2b)
Junction temperature
Storage temperature range
VCES
VGES
VGES
ICP
PC (1)
PC (2)
Tj
Tstg
400
±4
±5
130
0.83
0.69
150
−55 to 150
V
V
A
W
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Thermal resistance , junction to
ambient (t = 10 s)
(Note2a)
Thermal resistance , junction to
ambient (t = 10 s)
(Note2b)
Rth (j-a) (1)
Rth (j-a) (2)
Rating
150
180
Unit
°C/W
°C/W
Marking (Note 3、Note 4)
8765
5G133
Part No. (or abbreviation code)
Product-specific code
Lot No
www.DUatnaiSt:hmeemt4U.com
1,2,3
4
5,6,7,8
Emitter
Gate
Collector
JEDEC
―
JEITA
―
TOSHIBA
2-3Y1A
Weight: 0.02 g (Typ.)
Circuit Configuration
8 76 5
1 23 4
Pin #1
1234
Note : For (Note 1) , (Note 2a) , (Note 2b) , (Note 3) and (Note 4) .
1 2010-01-15
1 page  
400 VCE, VGE – QG 8
Common emitter
VCC = 300 V
RL = 2 Ω
300 VCE
Ta = 25°C
6
200
VGE
4
100 2
00
0 10 20 30 40 50
Gate charge QG (nC)
GT5G133
10000
1000
C – VCE
Cies
www.DataSheet4U.com
100
Coes
10
1
1
Cres
Common emitter
VGE = 0 V
f = 1 MHz
Ta = 25°C
10 100 1000
Corrector‐emitter voltage VCE (V)
10
1
0.1
10
Switching Time – RG
ton tr
toff
tf
Common emitter
VCC = 300 V
VGE = 3 V
IC = 130 A
Ta = 25°C
100 1000
Gate resistance RG (Ω)
Switching Time – IC
10
1
0.1
0
toff
tf
ton Common emitter
tr
VCC = 300 V
VGE = 3 V
RG = 62 Ω
Ta = 25°C
40 80 120 160
Collector current IC (A)
200
Maximum Operating Area
800
600
400
200
VCM = 350 V
Ta <= 70°C
VGE = 2.5 V
0 56 Ω <= RG <= 91 Ω
0 40 80
120 160
Peak corrector current ICP (A)
200
Minimum Gate Drive Area
160
120
Ta = 25°C 70
80
40
0
02
4
Gate‐emitter voltage VGE (V)
6
5 2010-01-15
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet GT5G133.PDF ] | |
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