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Número de pieza | NTMFS4709N | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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No Preview Available ! NTMFS4709N
Power MOSFET
30 V, 94 A, Single N-Channel, SOIC-8 FL
Features
•ăLow RDS(on) to Minimize Conduction Losses
•ăLow Capacitance to Minimize Driver Losses
•ăOptimized Gate Charge to Minimize Switching Losses
•ăThese are Pb-Free Devices
Applications
•ăVCORE Applications
•ăDC-DC Converters
•ăLow Side Switching
MAXIMUM RATINGS (TJ=25°C unless otherwise stated)
Rating
Symbol Value
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current RqJA
(Note 1)
TA = 25°C
TA = 85°C
VDSS
VGS
ID
30
±20
18
13
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
Steady
State
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
PD
ID
2.35
11
8.0
0.91
94
68
Power Dissipation
RqJC (Note 1)
Pulsed Drain Cur‐
rent
Current limited by
package
TC = 25°C
PD
TA = 25°C,
tp = 10 ms
TA = 25°C
IDM
IDmaxPkg
62.5
140
140
Operating Junction and
Storage Temperature
Source Current (Body Diode)
Drain to Source
TJ,
TSTG
IS
dV/dt
-55 to
+150
62.5
10
Single Pulse Drain-to-Source Avalanche
Energy TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 30 Apk, L = 1.0 mH, RG = 25 W
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
TL
450
260
Unit
V
V
A
W
A
W
A
W
A
A
°C
A
V/ns
mJ
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu.
2. Surface-mounted on FR4 board using the minimum recommended pad size.
www.DataSheet4U.com
http://onsemi.com
V(BR)DSS
30 V
RDS(on) Typ
2.85 mW @ 10 V
4.0 mW @ 4.5 V
ID Max
94 A
N-Channel
D
G
S
MARKING DIAGRAM &
PIN ASSIGNMENT
1
SOIC-8 FLAT LEAD
CASE 488AA
STYLE 1
D
S
S 4709N
S AYWWĂG
GG
D
D
D
4709N
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4709NT1G SOIC-8 FL 1500Ă/ĂaTpe & Reel
(Pb-Free)
NTMFS4709NT3G SOIC-8 FL 5000Ă/ĂaTpe & Reel
(Pb-Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©Ă Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 3
1
Publication Order Number:
NTMFS4709N/D
1 page NTMFS4709N
4000
CISS
3000
TJ = 25°C
2000
CISS
CRSS
1000
COSS
0 VDS = 0 V VGS = 0 V
CRSS
10 5 0 5 10 15 20 25
VGS VDS
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
12
QT
10
8
6
Qgs
4
Qgd
www.DataSheet4U.com
2
ID = 30 A
0 TJ = 25°C
0 10 20 30 40 50
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
1000
VDD = 15 V
ID = 30 A
VGS = 11.5 V
100 tr
td(off)
tf
10
td(on)
30
VGS = 0 V
TJ = 25°C
20
10
1
1 10 100
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
0
0 0.2 0.4 0.6 0.8 1
VSD, SOURCE-TO-DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
700
ID = 36 A
600
500
400
300
200
100
0
25 50 75 100 125 150
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet NTMFS4709N.PDF ] |
Número de pieza | Descripción | Fabricantes |
NTMFS4709N | Power MOSFET ( Transistor ) | ON Semiconductor |
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