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EM641FT8T Schematic ( PDF Datasheet ) - Emerging Memory & Logic Solutions

Teilenummer EM641FT8T
Beschreibung 512K x8 bit Low Power Full CMOS Static RAM
Hersteller Emerging Memory & Logic Solutions
Logo Emerging Memory & Logic Solutions Logo 




Gesamt 11 Seiten
EM641FT8T Datasheet, Funktion
Document Title
512K x8 bit Low Power Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
History
Initial Draft
0.1 Revision
IDR Current from 1.5uA to 7uA
tOE from 25nsec to 30nsec with 55ns part
EM641FT8T Series
Low Power, 512Kx8 SRAM
www.DataSheet4U.com
Draft Date Remark
Nov. 20, 2007 Preliminary
Dec. 5, 2007
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
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EM641FT8T Datasheet, Funktion
TIMING DIAGRAMS
EM641FT8T Series
Low Power, 512Kx8 SRAM
www.DataSheet4U.com
TIMING WAVEFORM OF READ CYCLE(1) (Address Transition Controlled)
Address
Data Out
tRC
tAA
tOH
Previous Data Valid
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (OE Controlled)
Address
CS
OE
Data Out
High-Z
tRC
tAA
tCO
tOE
tOLZ
tLZ
tOH
tHZ
Data Valid
tOHZ
High-Z
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referenced to output voltage levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
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