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EM610FV8S Schematic ( PDF Datasheet ) - Emerging Memory & Logic Solutions

Teilenummer EM610FV8S
Beschreibung 128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Hersteller Emerging Memory & Logic Solutions
Logo Emerging Memory & Logic Solutions Logo 




Gesamt 11 Seiten
EM610FV8S Datasheet, Funktion
merging Memory & Logic Solutions Inc.
Document Title
128K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No. History
0.0 Initial Draft
0.1 2’nd Draft Add Pb-free part number
EM610FV8S Series
Low Power, 128Kx8 SRAM
www.DataSheet4U.com
Draft Date
Remark
May 9 , 2003
February 13 , 2004
Emerging Memory & Logic Solutions Inc.
IT Venture Tower Eastside 11F, 78, Karac-Dong, Songpa-Ku, Seoul, Rep.of Korea Zip Code : 138-160
Tel : +82-2-2142-1759~1766 Fax : +82-2-2142-1769 / Homepage : www.emlsi.com
The attached datasheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1






EM610FV8S Datasheet, Funktion
merging Memory & Logic Solutions Inc.
TIMING DIAGRAMS
EM610FV8S Series
Low Power, 128Kx8 SRAM
www.DataSheet4U.com
TIMING WAVEFORM OF READ CYCLE(1). (Address Controlled, CS1=OE=VIL, CS2= WE=VIH )
Address
Data Out
tR C
tAA
tOH
Previous Data Valid
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE = VIH)
Address
CS1
CS2
OE
Data Out
tR C
tAA
tCO
tOE
High-Z
tOLZ
tLZ
tOH
tHZ
Data Valid
tOHZ
NOTES (READ CYCLE)
1. tHZ and tOHZ are defined as the outputs achieve the open circuit conditions and are not referanced to output voltage levels.
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device
interconnection.
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