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EM620FV8BT Schematic ( PDF Datasheet ) - Emerging Memory & Logic Solutions

Teilenummer EM620FV8BT
Beschreibung 256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
Hersteller Emerging Memory & Logic Solutions
Logo Emerging Memory & Logic Solutions Logo 




Gesamt 11 Seiten
EM620FV8BT Datasheet, Funktion
Document Title
256K x8 bit Low Power and Low Voltage Full CMOS Static RAM
Revision History
Revision No.
0.0
0.1
0.2
History
Initial Draft
0.1 Revision
0.2 Revision
VIH level change from 2.0V to 2.2V
Fix typo error
EM620FV8BT Series
Low Power, 256Kx8 SRAM
www.DataSheet4U.com
Draft Date
July 16, 2007
Aug. 16, 2007
Nov. 13, 2007
Remark
Emerging Memory & Logic Solutions Inc.
4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-719
Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com
The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your
questions about device. If you have any questions, please contact the EMLSI office.
1






EM620FV8BT Datasheet, Funktion
TIMING DIAGRAMS
EM620FV8BT Series
Low Power, 256Kx8 SRAM
www.DataSheet4U.com
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, CS2=WE=VIH)
Address
Data Out
tRC
tOH
Previous Data Valid
tAA
Data Valid
TIMING WAVEFORM OF READ CYCLE(2) (WE = VIH)
Address
CS1
tRC
tAA
tCO1,2
tOH
CS2
OE
Data Out
tOE
High-Z
tOLZ
tLZ1,2
tWHZ
tHZ1,2
Data Valid
tOHZ
NOTES (READ CYCLE)
1. tHZ1,2 and tOHZ are defined as the outputs achieve the open circuit conditions and are not referenced to output voltage levels.
2. At any given temperature and voltage condition, tHZ1,2(Max.) is less than tLZ1,2(Min.) both for a given device and from device to
device interconnection.
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EM620FV8B256K x 8 bit Low Power and Low Voltage Full CMOS Static RAMEmerging Memory & Logic Solutions
Emerging Memory & Logic Solutions
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