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WFF12N65 Schematic ( PDF Datasheet ) - WINSEMI SEMICONDUCTOR

Teilenummer WFF12N65
Beschreibung Silicon N-Channel MOSFET
Hersteller WINSEMI SEMICONDUCTOR
Logo WINSEMI SEMICONDUCTOR Logo 




Gesamt 7 Seiten
WFF12N65 Datasheet, Funktion
www.DataSheet.in
Features
■ 12A,650V,RDS(on)(Max0.8Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 51.7nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150)
WFF12N65
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, VDMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for AC-DCswitching power supplies, DC-DCpower converters,
high voltage H-bridge motor drive PWM
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25)
ID
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25
TJ, Tstg
Junction and Storage Temperature
TL Channel Temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
650
12
±30
990
22
4.5
51
0.41
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/
Thermal Characteristics
Symbol
Parameter
RQJC
RQCS
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Value
Min Typ Max
- - 2.45
--
-
- - 62.5
Units
/W
/W
/W
Rev.A Oct.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.






WFF12N65 Datasheet, Funktion
www.DataSheet.in
WFF12N65
Fig.13 Peak Diode Recovery dv/dt Test Circuit & Waveform
Steady, all for your advance
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