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PDF WFP10N60 Data sheet ( Hoja de datos )

Número de pieza WFP10N60
Descripción Silicon N-Channel MOSFET
Fabricantes WINSEMI SEMICONDUCTOR 
Logotipo WINSEMI SEMICONDUCTOR Logotipo



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No Preview Available ! WFP10N60 Hoja de datos, Descripción, Manual

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Features
10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V
Ultra-low Gate Charge(Typical 34nC)
Fast Switching Capability
100%Avalanche Tested
Isolation Voltage(VISO=4000V AC)
Improved dv/dt capability
WFP10N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology. This latest technology has been especially
designed to minimize on -state resistance,have a highrugged avalanche
characteristics. This devices is specially wellsuited for high efficiency
switch mode power supplies , power factor correction, UPS and a
electronic lamp ballast base on half bridge.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current(@Tc=25)
Continuous Drain Current(@Tc=100)
IDM Drain Current Pulsed
VGS Gate to Source Voltage
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25)
PD
Derating Factor above 25
TJ,Tstg
Junction and Storage Temperature
TL Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction-to -Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
600
10*
6.0*
40*
±30
713
18
4.5
150
0.4
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ ns
W
W/
Value
Units
Min Typ Max
- - 0.83 /W
- - 62.5 /W
Rev.A Sep.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.

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WFP10N60 pdf
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WFP10N60
Fig.10 Gate Test circuit & Waveform
Fig.11 Resistive Switching Test Circuit & Waveform
Fig.12 Uncamped Inductive Switching Test Circuit & Waveform
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