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Teilenummer | WTD9575 |
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Beschreibung | Surface Mount P-Channel Enhancement Mode POWER MOSFET | |
Hersteller | Weitron Technology | |
Logo | ||
Gesamt 6 Seiten Surface Mount P-Channel Enhancement
Mode POWER MOSFET
3 DRAIN
P b Lead(Pb)-Free
1 GATE
Features:
*Super High Dense Cell Design For Low RDS(ON)
R DS(ON) <90m Ω@V GS =-10V
*Simple Drive Requirement
*Lower On-resistance
*Fast Switching Characteristic
*TO-252 Package
2
SOURCE
WTD9575
DRAIN CURRENT
-15 AMPERES
DRAIN SOURCE VOLTAGE
-60 VOLTAGE
4
1. GATE
1 23
2.4 DRAIN
3. SOURCE
D-PAK / (TO-252)
Maximum Ratings(TA=25 C Unless Otherwise Specified)
Rating
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current, (VGS@10V, TC=25˚C)
, (VGS@10V, TC=100˚C)
Pulsed Drain Current1
VGS
ID
IDM
Total Power Dissipation(TC=25˚C)
Maximum Thermal Resistace Junction-case
PD
RθJC
Maximum Thermal Resistace Junction-ambient
RθJA
Operating Junction and Storage Temperature Range
TJ,Tstg
Value
-60
±25
-15
-9.5
-45
36
3.5
110
- 55~+150
Unit
V
A
W
˚C/W
˚C/W
˚C
Device Marking
WTD9575=9575
WEITRON
http:www.weitron.com.tw
www.DataSheet.in
1/6
01-Aug-05
WTD9575
D-PAK / (TO-252) Outline Dimension
Unit:mm
E
A
4
123
B
G
H
J
D
C
M
K
L
D-PAK
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
6.40
9.00
0.50
-
2.20
0.45
1.00
5.40
0.30
0.70
0.90
Max
6.80
10.00
0.80
2.30
2.50
0.55
1.60
5.80
0.64
1.70
1.50
WEITRON
http://www.weitron.com.tw
www.DataSheet.in
6/6
01-Aug-05
6 Page | ||
Seiten | Gesamt 6 Seiten | |
PDF Download | [ WTD9575 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
WTD9575 | Surface Mount P-Channel Enhancement Mode POWER MOSFET | Weitron Technology |
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