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Teilenummer | WTD8A60 |
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Beschreibung | Sensitive Gate Triac | |
Hersteller | WINSEMI SEMICONDUCTOR | |
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Gesamt 5 Seiten www.DataSheet.in
Features
� Repetitive Peak off -State Voltage:600V
� R.M.S On-State Current(IT(RMS)=8A)
� High Commutation dv/dt
� Isolation Voltage (VISO=1500V AC)
WTD8A60
Sensitive Gate Triac
General Description
Sensitive gate triggering Triac is suitable for direct couplingto
TTL , CMOS and application such as various logic Functions, low
power AC switching applications,such as fanspeed,small light
controllers and home appliance equipment.
Absolute Maximum Ratings (TJ=25℃ unless otherwise specified)
symbol
Parameter
condition
VDRM
IT(RMS)
Repetitive Peak Off-State Voltage
R.M.S On-State Current
Tc=89℃
ITSM Surge On-State Current
One Cycle, 50Hz/60Hz,
Peak,Non-Repetitive
I2t I2t
PGM Peak Gate Power Dissipation
PG(AV) Average Gate Power dissipation
IGM Peak Gate Current
VGM Peak Gate Voltage
VISO Isolation Breakdown voltage(R.M.S.) A.C 1 minute
TJ Operating Junction Temperature
TSTG
Storage Temperature
Ratings
600
8.0
80/88
32
5.0
0.5
2.0
10
1500
-40~125
-40~150
Units
V
A
A
A2s
W
W
A
V
V
℃
℃
Thermal Characteristics
Symbol
Parameter
RθJc Thermal Resistance Junction to Case
Value
3.7
Units
℃/W
Rev.A Aug.2010
Copyright@WinSemi Semiconductor Co., Ltd., All right reserved.
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Seiten | Gesamt 5 Seiten | |
PDF Download | [ WTD8A60 Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
WTD8A60 | Sensitive Gate Triac | WINSEMI SEMICONDUCTOR |
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