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Teilenummer | G4BC30KD |
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Beschreibung | IRG4BC30KD | |
Hersteller | International Rectifier | |
Logo | ||
Gesamt 10 Seiten PD -91595A
IRG4BC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
G
• tighter parameter distribution and higher efficiency than
previous generations
• IGBT co-packaged with HEXFREDTM ultrafast,
E
n-channel
ultrasoft recovery antiparallel diodes
Benefits
• Latest generation 4 IGBTs offer highest power density
motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
• This part replaces the IRGBC30KD2 and IRGBC30MD2
products
• For hints see design tip 97003
Absolute Maximum Ratings
Short Circuit Rated
UltraFast IGBT
VCES = 600V
VCE(on) typ. = 2.21V
@VGE = 15V, IC = 16A
TO-220AB
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
tsc
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
28
16
58
58
12
58
10
± 20
100
42
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
µs
V
W
°C
Thermal Resistance
RθJC
RθJC
RθCS
RθJA
Wt
Parameter
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2 (0.07)
Max.
1.2
2.5
–––
80
–––
Units
°C/W
g (oz)
www.irf.com
1
4/24/2000
www.DataSheet.in
IRG4BC30KD
5.0 RG = 2O3hΩm
T J = 150° C
VCC = 480V
4.0 VGE = 15V
100
VGE = 20V
T J = 112255°oCC
3.0
10
2.0
1.0
0.0
0
8 16 24 32
I C , Collector-to-emitter Current (A)
SAFE OPERATING AREA
1
40 1 10 100
VCE , Collector-to-Emitter Voltage (V)
1000
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Fig. 12 - Turn-Off SOA
TJ = 15 0°C
10 TJ = 12 5°C
TJ = 2 5°C
1
0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage Drop - V FM (V)
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6 www.irf.com
www.DataSheet.in
6 Page | ||
Seiten | Gesamt 10 Seiten | |
PDF Download | [ G4BC30KD Schematic.PDF ] |
Teilenummer | Beschreibung | Hersteller |
G4BC30KD | IRG4BC30KD | International Rectifier |
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